Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

Abstract

This study discusses variability of the high and low resistance states (HRS and LRS, respectively) during the pulse cycling of the cross-bar 1T1R HfO2 based RRAM devices. Read current variation in LRS is found to follow a normal distribution while in the HRS, it is described by the log-normal dependency. It has been identified that the endurance degradation primarily occurs due increasing resistance in LRS caused by the shrinkage of the filament size.