基于hfo2的RRAM在高、低电阻状态下耐力退化的统计评估

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532093

S. Deora, G. Bersuker, M. Sung, D. Gilmer, P. Kirsch, H.-F Li, H. Chong, S. Gausepohl

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引用次数: 11

摘要

本研究讨论了基于交叉棒1T1R HfO2的RRAM器件在脉冲循环过程中的高电阻状态和低电阻状态(分别为HRS和LRS)的可变性。在LRS中，读电流的变化遵循正态分布，而在HRS中，它由对数正态依赖关系描述。已经确定，耐久性下降主要是由于LRS中长丝尺寸收缩引起的阻力增加而发生的。

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Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

This study discusses variability of the high and low resistance states (HRS and LRS, respectively) during the pulse cycling of the cross-bar 1T1R HfO2 based RRAM devices. Read current variation in LRS is found to follow a normal distribution while in the HRS, it is described by the log-normal dependency. It has been identified that the endurance degradation primarily occurs due increasing resistance in LRS caused by the shrinkage of the filament size.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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