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Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices 深亚微米CMOS器件盐化钴工艺的泄漏机理及优化条件
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499235
K. Goto, I. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki, T. Sugii
{"title":"Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices","authors":"K. Goto, I. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki, T. Sugii","doi":"10.1109/IEDM.1995.499235","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499235","url":null,"abstract":"For high performance deep-submicron CMOS devices, the TiN capped Co salicide process is one of the most attractive candidate to reduce the sheet resistances of the narrow gate, source, and drain regions. However, the increased leakage current for a very shallow p-n junction is a serious problem. We clarified a new leakage mechanism of the Co salicided junction. Measurements and simulated results of the leakage current revealed that the leakage current flows from many localized points. These leakage points were caused by CoSi spikes growing from the silicide film, which we observed by TEM analysis. We then optimized the Co salicide process conditions to reduce the leakage current in the ultra-shallow junctions of deep-submicron CMOS devices.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129273896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
An assessment of the state-of-the-art 0.5 /spl mu/m bulk CMOS technology for RF applications 对射频应用中最先进的0.5 /spl mu/m批量CMOS技术的评估
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499320
S. Voinigescu, S. W. Tarasewicz, T. MacElwee, J. Ilowski
{"title":"An assessment of the state-of-the-art 0.5 /spl mu/m bulk CMOS technology for RF applications","authors":"S. Voinigescu, S. W. Tarasewicz, T. MacElwee, J. Ilowski","doi":"10.1109/IEDM.1995.499320","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499320","url":null,"abstract":"We demonstrate that, given the appropriate layout geometry, state-of-the-art, salicided n-MOSFETs with 0.5 /spl mu/M drawn gates exhibit similar g/sub m/ (160 mS/mm), f/sub T/ (20 GHz), f/sub MAX/ (37 GHz), and F/sub MIN/ (1.9 dB @ 3.4 GHz) as the more costly, metal-reinforced SOI or SOS devices of identical gate length. The record f/sub MAX/ value for 0.5 /spl mu/m bulk CMOS is comparable to that of self-aligned, double-polysilicon BJTs.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124186030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 76
CCD-based sensor array for magnetic pattern recognition 基于ccd的磁模式识别传感器阵列
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497206
N. O, A. Nathan
{"title":"CCD-based sensor array for magnetic pattern recognition","authors":"N. O, A. Nathan","doi":"10.1109/IEDM.1995.497206","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497206","url":null,"abstract":"A magnetic sensor array, comprising Hall sensors interfaced to a readout CCD, has been fabricated using CCD technology. The array is reminiscent of a linear photodiode CCD, with the exception that the photodiodes are replaced by buried-channel MOSFET magnetic pixels. Based on extensive optimization, the magnetic pixels provide at least an order of magnitude better resolution than conventional designs. Limitations imposed in the past by the circuit-based readout techniques are avoided by using a readout CCD. This paper describes selected aspects of the system design.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123611138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors 小型硅场效应晶体管亚带隙冲击电离的蒙特卡罗研究
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499202
M. Fischetti, S. Laux
{"title":"Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors","authors":"M. Fischetti, S. Laux","doi":"10.1109/IEDM.1995.499202","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499202","url":null,"abstract":"The observation of impact ionization in small Si FETs at sub-band-gap source-to-drain bias is explained by the presence of high-energy tails in the electron energy distribution around the drain region. These tails are caused by the strong thermalizing effect of dynamically-screened electron-electron interactions. Under these bias conditions, a larger band-gap, enhanced dielectric screening, and reduced high-energy tails in the distribution function at the source cause a reduction of impact ionization at lower lattice temperatures.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123665495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 65
Smart power technology and the evolution from protective umbrella to complete system 智能电源技术与从保护伞到完整系统的演变
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497173
B. Murari
{"title":"Smart power technology and the evolution from protective umbrella to complete system","authors":"B. Murari","doi":"10.1109/IEDM.1995.497173","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497173","url":null,"abstract":"Almost unnoticed, power integrated circuit technology has evolved significantly over the last few years. Previously the focus was always on improving the performance of power integrated circuits; today the result of innovations is a new kind of technology that allows entire systems to be integrated on one piece of silicon.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114339292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A robust gated-field-emission triode 一个强大的门控场发射三极管
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499223
S. Lu, J.C.-M. Huang, C. Lee, J.-M. Wang, J. Peng, W. Wang, J. Tsai, D. Liu
{"title":"A robust gated-field-emission triode","authors":"S. Lu, J.C.-M. Huang, C. Lee, J.-M. Wang, J. Peng, W. Wang, J. Tsai, D. Liu","doi":"10.1109/IEDM.1995.499223","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499223","url":null,"abstract":"A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116296919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of the "Klevafella" permanent magnet focusing system to linear beam microwave tubes “Klevafella”永磁聚焦系统在线性束流微波管中的应用
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497216
D.S. Furuno, D. P. Myers, K. Lancaster, H. Leupold, E. Potenziani, A. Nanji, G.K. Sadakane
{"title":"Application of the \"Klevafella\" permanent magnet focusing system to linear beam microwave tubes","authors":"D.S. Furuno, D. P. Myers, K. Lancaster, H. Leupold, E. Potenziani, A. Nanji, G.K. Sadakane","doi":"10.1109/IEDM.1995.497216","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497216","url":null,"abstract":"The \"Klevafella\" permanent magnet system uses a cladded design to produce a constant, longitudinal magnetic field in a compact, lightweight package. In this effort, the Klevafella design was adapted to the specific requirements of a linear beam microwave tube. Subsequently, a system was constructed to test the design. This system was operated with a 22 kV, 1.6 A beam tester and provided 98% beam transmission. The successful integration of the Klevafella design with this beam tester confirms that the Klevafella permanent magnet system is compatible with linear beam microwave tubes.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127884770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monte Carlo simulation of electron transport in strained Si/Si/sub 1-x/Ge/sub x/ n-MOSFETs 应变Si/Si/sub - 1-x/Ge/sub -x/ n- mosfet中电子输运的Monte Carlo模拟
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.499330
M. Rashed, W. Shih, S. Jallepalli, T. Kwan, C. Maziar
{"title":"Monte Carlo simulation of electron transport in strained Si/Si/sub 1-x/Ge/sub x/ n-MOSFETs","authors":"M. Rashed, W. Shih, S. Jallepalli, T. Kwan, C. Maziar","doi":"10.1109/IEDM.1995.499330","DOIUrl":"https://doi.org/10.1109/IEDM.1995.499330","url":null,"abstract":"Electron transport in the inversion layer of strained-silicon-channel n-MOSFETs is investigated using a Monte Carlo (MC) tool that takes into account the 2D nature of the electron gas. The subband structure is calculated using a bulk nonparabolic E-K relation, E(K)(1+/spl alpha/E(M))=/spl gamma//sub bulk/(K), where /spl alpha/ is the nonparabolicity coefficient. Single particle MC simulations are performed at room temperature by solving a 2D multi-subband BTE. The scattering mechanisms include phonon, surface roughness and alloy scattering. Agreement between calculated and experimental enhancement of effective mobility is presented.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128097652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Physical etching/deposition simulation with collision-free boundary movement 无碰撞边界移动的物理蚀刻/沉积模拟
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497192
Z. Hsiau, E. Kan, J. Mcvittie, R. Dutton
{"title":"Physical etching/deposition simulation with collision-free boundary movement","authors":"Z. Hsiau, E. Kan, J. Mcvittie, R. Dutton","doi":"10.1109/IEDM.1995.497192","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497192","url":null,"abstract":"We demonstrate that accurate and robust physical simulation of etching and deposition in the semiconductor manufacturing technology can be achieved by using the collision-free boundary movement method. Constraints for preserving physical accuracy, treatment of multiple junctions, adaptive gridding by quad/oct-tree meshes and experimental corroboration of void and stringer formation in 2D and 3D structures will be presented.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125840804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Optical limitations to cell size reduction in IT-CCD image sensors IT-CCD图像传感器减小单元尺寸的光学限制
Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI: 10.1109/IEDM.1995.497204
T. Satoh, N. Mutoh, M. Furumiya, I. Murakami, S. Suwazono, C. Ogawa, K. Hatano, H. Utsumi, S. Kawai, K. Arai, M. Morimoto, K. Orihara, T. Tamura, N. Teranishi, Y. Hokari
{"title":"Optical limitations to cell size reduction in IT-CCD image sensors","authors":"T. Satoh, N. Mutoh, M. Furumiya, I. Murakami, S. Suwazono, C. Ogawa, K. Hatano, H. Utsumi, S. Kawai, K. Arai, M. Morimoto, K. Orihara, T. Tamura, N. Teranishi, Y. Hokari","doi":"10.1109/IEDM.1995.497204","DOIUrl":"https://doi.org/10.1109/IEDM.1995.497204","url":null,"abstract":"We have determined the practical limits of cell size reduction in interline-transfer CCD image sensors, limits resulting from diffraction occurring at the aperture above the photodiode. We have found that image cell size cannot be reduced to a level for which aperture width would fall below about 0.2 /spl mu/m. We have also found, however, that image cells with greater than 0.2 /spl mu/m aperture size are sensitive over the entire wavelength range of visible light, and that sensitivity can be increased by thinning the photoshield film.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125990780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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