S. Lu, J.C.-M. Huang, C. Lee, J.-M. Wang, J. Peng, W. Wang, J. Tsai, D. Liu
{"title":"一个强大的门控场发射三极管","authors":"S. Lu, J.C.-M. Huang, C. Lee, J.-M. Wang, J. Peng, W. Wang, J. Tsai, D. Liu","doi":"10.1109/IEDM.1995.499223","DOIUrl":null,"url":null,"abstract":"A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A robust gated-field-emission triode\",\"authors\":\"S. Lu, J.C.-M. Huang, C. Lee, J.-M. Wang, J. Peng, W. Wang, J. Tsai, D. Liu\",\"doi\":\"10.1109/IEDM.1995.499223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure.
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