A robust gated-field-emission triode

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499223

S. Lu, J.C.-M. Huang, C. Lee, J.-M. Wang, J. Peng, W. Wang, J. Tsai, D. Liu

引用次数: 1

Abstract

A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure.

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一个强大的门控场发射三极管

在较宽的真空条件下，实验观察到场发射电流水平与邻近真空环境呈线性关系。发射极尖端位于栅极电极上方的栅极场发射三极管可以在更恶劣的真空环境下生存，并使测量成为可能。这种坚固的结构也改善了跨导性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of International Electron Devices Meeting

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