S. Voinigescu, S. W. Tarasewicz, T. MacElwee, J. Ilowski
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引用次数: 76
摘要
我们证明，给定适当的布局几何形状，具有0.5 /spl μ M /M栅极的最先进的盐化n- mosfet具有与相同栅极长度的更昂贵的金属增强SOI或SOS器件相似的g/sub M / (160 mS/mm)， f/sub T/ (20 GHz)， f/sub MAX/ (37 GHz)和f/sub MIN/ (1.9 dB @ 3.4 GHz)。0.5 /spl mu/m块体CMOS的记录f/sub MAX/值与自对准双多晶硅bjt相当。
An assessment of the state-of-the-art 0.5 /spl mu/m bulk CMOS technology for RF applications
We demonstrate that, given the appropriate layout geometry, state-of-the-art, salicided n-MOSFETs with 0.5 /spl mu/M drawn gates exhibit similar g/sub m/ (160 mS/mm), f/sub T/ (20 GHz), f/sub MAX/ (37 GHz), and F/sub MIN/ (1.9 dB @ 3.4 GHz) as the more costly, metal-reinforced SOI or SOS devices of identical gate length. The record f/sub MAX/ value for 0.5 /spl mu/m bulk CMOS is comparable to that of self-aligned, double-polysilicon BJTs.
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