无碰撞边界移动的物理蚀刻/沉积模拟

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.497192

Z. Hsiau, E. Kan, J. Mcvittie, R. Dutton

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引用次数: 6

摘要

我们证明了使用无碰撞边界移动方法可以实现半导体制造技术中蚀刻和沉积的精确和稳健的物理模拟。将介绍保持物理精度的限制，多结点的处理，四/八叉树网格的自适应网格划分以及二维和三维结构中空洞和弦形成的实验证实。

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Physical etching/deposition simulation with collision-free boundary movement

We demonstrate that accurate and robust physical simulation of etching and deposition in the semiconductor manufacturing technology can be achieved by using the collision-free boundary movement method. Constraints for preserving physical accuracy, treatment of multiple junctions, adaptive gridding by quad/oct-tree meshes and experimental corroboration of void and stringer formation in 2D and 3D structures will be presented.

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Proceedings of International Electron Devices Meeting

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