1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)最新文献

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Behavior of fibre Bragg gratings under high total dose gamma radiation 高总剂量辐射下光纤布拉格光栅的特性
A. Gusarov, Francis Berghmans, A. Fernandez, O. Deparis, Y. Defosse, D. Starodubov, M. Decréton, P. Mégret, M. Blondel
{"title":"Behavior of fibre Bragg gratings under high total dose gamma radiation","authors":"A. Gusarov, Francis Berghmans, A. Fernandez, O. Deparis, Y. Defosse, D. Starodubov, M. Decréton, P. Mégret, M. Blondel","doi":"10.1109/RADECS.1999.858625","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858625","url":null,"abstract":"We report on the effect of MGy dose level /spl gamma/-irradiation on the parameters of fibre Bragg gratings intended for sensing applications. The /spl gamma/-radiation sensitivities of gratings written with near-UV 330 nm light in hydrogen loaded Ge-doped fibres and of a grating written in a N-doped fibre were found to be higher than that of gratings written in a 10 mol.% Ge-doped fibre without hydrogen loading. In the former cases, changes in the amplitude and the width of the Bragg peak were observed during /spl gamma/-irradiation while no change was observed in the latter case. For the grating written in the N-doped fibre, the radiation-induced shift of the Bragg peak did not saturate while for gratings written in hydrogen-loaded Ge-doped fibres it saturated to a higher level than for gratings written in unloaded Ge-doped fibre.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129884405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 73
Effects of heavy ion impact on power diodes 重离子冲击对功率二极管的影响
G. Busatto, F. Iannuzzo, J. Wyss, D. Pantano, D. Bisello
{"title":"Effects of heavy ion impact on power diodes","authors":"G. Busatto, F. Iannuzzo, J. Wyss, D. Pantano, D. Bisello","doi":"10.1109/RADECS.1999.858581","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858581","url":null,"abstract":"An experimental study of the bombardment with high energy /sup 28/Si of power diodes is presented, including charge spectra and current waveforms. It is shown that, for biasing voltages beyond a threshold value, a second conspicuous charge population appears. The corresponding waveforms are classified. The threshold value depends on the ion energy. The peak value of the current depends on the applied voltage and may reach values large enough to trigger instabilities inside the diode.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126535293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Investigation of the dynamics of enhanced natural and artificial electron fluxes in the radiation belts: influence of the whistler mode wave model 辐射带中自然和人工电子通量增强的动力学研究:whistler模式波模型的影响
N. Baussart, F. Simonet, T. Réveillé, P. Bertrand, A. Ghizzo, R. André, F. Lefeuvre
{"title":"Investigation of the dynamics of enhanced natural and artificial electron fluxes in the radiation belts: influence of the whistler mode wave model","authors":"N. Baussart, F. Simonet, T. Réveillé, P. Bertrand, A. Ghizzo, R. André, F. Lefeuvre","doi":"10.1109/RADECS.1999.858533","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858533","url":null,"abstract":"A numerical code for studying the temporal behaviour of electron fluxes in radiation belts is presented. Our model describing electromagnetic whistler mode waves is also described. A sensitivity study has been made on the whistler mode wave model.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128000776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Empirical modeling of proton induced SEU rates 质子诱导SEU速率的经验模型
J. Barak
{"title":"Empirical modeling of proton induced SEU rates","authors":"J. Barak","doi":"10.1109/RADECS.1999.858571","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858571","url":null,"abstract":"A new method for calculating proton induced SEU (p-SEU) rates in orbit from heavy ion cross section data is presented. It is based on a simple expression to derive the p-SEU cross section from the heavy ion results which leads to an 'effective LET flux' for the protons in the given orbit. The resulted p-SEU rates are in good agreement with those calculated from measured p-SEU cross section data. A comparison with other empirical models is given.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128134524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Characterization of ionizing radiation effects in MOS structures by bipolar operation study 用双极操作研究电离辐射对MOS结构的影响
H. Bakhtiar, C. Picard, C. Brisset, A. Hoffmann, P. Mialhe, J. Charles
{"title":"Characterization of ionizing radiation effects in MOS structures by bipolar operation study","authors":"H. Bakhtiar, C. Picard, C. Brisset, A. Hoffmann, P. Mialhe, J. Charles","doi":"10.1109/RADECS.1999.858644","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858644","url":null,"abstract":"This work presents a method to characterize transistors of submicron dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes due to surface potential action on the space-charge region. Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115824083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic testing for radiation induced failures in a standard CMOS submicron technology pixel front-end 标准CMOS亚微米技术像素前端辐射诱发故障的动态测试
D. De Venuto, S. Corsi, M. Ohletz
{"title":"Dynamic testing for radiation induced failures in a standard CMOS submicron technology pixel front-end","authors":"D. De Venuto, S. Corsi, M. Ohletz","doi":"10.1109/RADECS.1999.858606","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858606","url":null,"abstract":"A testing method for the detection of performance degradation induced by high-dose irradiation in high-energy experiments has been developed. This method was successfully applied for testing the analogue CMOS front-end of a silicon pixel detector. The major effects of radiation induced faults have been investigated with respect to the special layout used for the nMOS transistors.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130633874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total dose and heavy ion evaluation of a hardened RISC microcontroller 强化RISC微控制器的总剂量和重离子评估
E. Feuilloley, D. Hamonic, S. Cayron, E. Dubocquet, P. Jeannin, F. Bezerra
{"title":"Total dose and heavy ion evaluation of a hardened RISC microcontroller","authors":"E. Feuilloley, D. Hamonic, S. Cayron, E. Dubocquet, P. Jeannin, F. Bezerra","doi":"10.1109/RADECS.1999.858639","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858639","url":null,"abstract":"This paper presents an evaluation methodology of the total dose and heavy ion response based on utilising the integrated test resources of the IEEE 1149.1 (JTAG) standard. The FLAME microcontroller (compatible with the SPARC/sup TM/ V8 architecture), fabricated in the Honeywell SSEC SOI RICMOS/sup TM/ IV technology, is used to validate the method.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123392210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fiber-optic link components for maintenance tasks in thermonuclear fusion environments 用于热核融合环境中维护任务的光纤链路组件
M. Van Uffelen, F. Berghmans, A. Nowodzinski, P. Jucker, B. Brichard, F. Vos, M. Decréton
{"title":"Fiber-optic link components for maintenance tasks in thermonuclear fusion environments","authors":"M. Van Uffelen, F. Berghmans, A. Nowodzinski, P. Jucker, B. Brichard, F. Vos, M. Decréton","doi":"10.1109/RADECS.1999.858630","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858630","url":null,"abstract":"Up to now, fiber optics and several photonic components have been considered for space and nuclear power plant applications, mainly at relatively low dose rates and total doses. In this paper, we present our recent results of particularly high dose gamma irradiation tests performed with different fiber-optic components intended for applications in enhanced radiation environments such as ITER (International Thermonuclear Experimental Reactor), We present a radiation induced loss at 1310 nm as low as 30 dB/km, measured at a cumulated dose of 3 MGy for a pure-silica core single mode fiber. On-line measurements with commercially available vertical-cavity surface-emitting lasers (VCSELs) emitting at 850 nm confirmed their excellent radiation hardness. Furthermore, we demonstrated that an initial power loss of about 6 dB is caused by an early degradation of a focusing lens in these connectorized components. A combined effect of dose rate, cumulated dose and temperature on the degradation of our devices under test (DUT) is evidenced.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122863072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
900MWe PWR: Behaviour of cables in severe accident conditions 900MWe压水堆:电缆在严重事故条件下的性能
Y. Armand, S. Esnouf, G. Gauthier, C. Leroy, J. Mattei
{"title":"900MWe PWR: Behaviour of cables in severe accident conditions","authors":"Y. Armand, S. Esnouf, G. Gauthier, C. Leroy, J. Mattei","doi":"10.1109/RADECS.1999.858583","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858583","url":null,"abstract":"Some items of equipment inside the containment can be used to minimise the consequences of a severe accident in terms of radioactive releases. Therefore, this equipment should be tested and estimations should be made regarding its behaviour when subjected to extreme conditions, particularly in terms of irradiation. This paper describes the tests carried out on the behaviour of instrumentation and control cables of the pressure relief valves installed on the pressuriser and which must be opened in order to prevent a meltdown under pressure. A specific study was conducted on the Hypalon(R) outer cladding of these cables. After dealing with the various problems which could call into question the relevance of the experiments in relation to real accident conditions, the test conditions are described and the results obtained are given. Based on monitoring of mechanical and electrical properties, it has been shown that the instrumentation and control cables of the pressure relief valves of the reactor coolant system remain intact for first 40 hours of the accident sequences used in these tests.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124630242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs 辐照商用功率vdmosfet的等温等时退火实验
A. Jaksic, M. Pejovic, G. Ristić
{"title":"Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs","authors":"A. Jaksic, M. Pejovic, G. Ristić","doi":"10.1109/RADECS.1999.858616","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858616","url":null,"abstract":"The paper presents results of a study of post-irradiation effects in two types of gamma-ray irradiated power VDMOSFETS, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"83 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132576359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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