用双极操作研究电离辐射对MOS结构的影响

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858644

H. Bakhtiar, C. Picard, C. Brisset, A. Hoffmann, P. Mialhe, J. Charles

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引用次数: 0

摘要

这项工作提出了一种表征亚微米尺寸晶体管的方法。对辐照前后晶体管衬底-漏极结的研究表明，由于表面电位作用于空间电荷区，辐照引起了衬底-漏极结电参数的变化。分析了在不同栅极电压下双极晶体管(漏极-衬底-源极作为发射基-集电极)电流增益的变化，并与剂量对氧化物的影响进行了比较。

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Characterization of ionizing radiation effects in MOS structures by bipolar operation study

This work presents a method to characterize transistors of submicron dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes due to surface potential action on the space-charge region. Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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