标准CMOS亚微米技术像素前端辐射诱发故障的动态测试

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858606

D. De Venuto, S. Corsi, M. Ohletz

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引用次数: 1

摘要

提出了一种在高能实验中检测高剂量辐照引起的性能退化的测试方法。该方法已成功地应用于硅像素探测器模拟CMOS前端的测试。针对纳米mos晶体管的特殊布局，研究了辐射诱发故障的主要影响。

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Dynamic testing for radiation induced failures in a standard CMOS submicron technology pixel front-end

A testing method for the detection of performance degradation induced by high-dose irradiation in high-energy experiments has been developed. This method was successfully applied for testing the analogue CMOS front-end of a silicon pixel detector. The major effects of radiation induced faults have been investigated with respect to the special layout used for the nMOS transistors.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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