辐照商用功率vdmosfet的等温等时退火实验

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858616

A. Jaksic, M. Pejovic, G. Ristić

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引用次数: 9

摘要

本文介绍了两种类型的伽玛射线辐照功率vdmosfet的辐照后效应的研究结果，这两种类型的vdmosfet可从不同的制造商处市售。在恒定偏置和开关栅偏置条件下进行了等温退火，并进行了等时退火。讨论了电荷泵送测量在商用三端vdmosfet中的应用。获得的结果除了能够深入了解所研究器件的辐照后响应外，还指出了一些有趣的辐照后现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

The paper presents results of a study of post-irradiation effects in two types of gamma-ray irradiated power VDMOSFETS, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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