Characterization of ionizing radiation effects in MOS structures by bipolar operation study

Abstract

This work presents a method to characterize transistors of submicron dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes due to surface potential action on the space-charge region. Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide.