2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)最新文献_第4页

Sub-continuum thermal simulations of deep sub-micron devices under ESD conditions 深亚微米器件在ESD条件下的亚连续热模拟

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871205

P. Sverdrup, K. Banerjee, C. Dai, W. Shih, R. Dutton, K. Goodson

引用次数: 11

Prediction of SiO/sub 2/ sputtering yield using molecular dynamics simulation 用分子动力学模拟方法预测SiO/ sub2 /溅射产率

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871246

Kyusang Lee, Tai-kyung Kim

{"title":"Prediction of SiO/sub 2/ sputtering yield using molecular dynamics simulation","authors":"Kyusang Lee, Tai-kyung Kim","doi":"10.1109/SISPAD.2000.871246","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871246","url":null,"abstract":"The surface of processed wafers during the plasma etching process is exposed to a shower of relatively high energy particles, and the surface reaction that evaporates the upper surface layer is induced by the collision. The surface profile evolution during plasma etching needs to be known in order to control the fine details of features of semiconductor devices. The process is a complex combination of factors such as incident particle kinetic energy, incident angle and substrate conditions. In this study, we performed molecular dynamics simulations of Ar/sup +/ ions bombarding a SiO/sub 2/ substrate and observed the sputtering yield as the incident angle and energy changes. The primary goal is to verify the process as a reliable source of microscopic sputtering yield data. We inserted 10 ps of relaxation right after each bombardment to allow the concentrated heat to diffuse into the bulk region, which gave us similar results to a previous study (Abrams and Graves, J. Vac. Sci. Tech. A vol. 16, pp. 3006-3019, 1998), and we observed the surface evolution during the process. These efforts predicted a different sputtering yield from the previous study, but the overall patterns of reaction product trajectories were similar.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126758010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved device technology evaluation and optimization 改进了器件技术评价和优化

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871231

D. Connelly, M. Foisy

引用次数: 5

Generic approaches to parasitic extraction problems [IC interconnects] 寄生提取问题的一般方法[集成电路互连]

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871211

J. Phillips

引用次数: 0

Simulation of gallium-arsenide based high electron mobility transistors 基于砷化镓的高电子迁移率晶体管的模拟

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871210

R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr

引用次数: 7

SOI related simulation challenges with moment based BTE solvers 基于矩的BTE求解器的SOI相关仿真挑战

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871253

J.L. Egley, B. Polsky, B. Min, E. Lyumkis, O. Penzin, M. Foisy

引用次数: 12

A fast three-dimensional MC simulator for tunneling diodes 隧道二极管的快速三维MC模拟器

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871199

M. Wagner, H. Mizuta, K. Nakazato

引用次数: 2

A physics-based empirical pseudopotential model for calculating band structures of simple and complex semiconductors 计算简单和复杂半导体能带结构的基于物理的经验赝势模型

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871250

G. Pennington, N. Goldsman, J.M. McGarrity, F. Crowne

{"title":"A physics-based empirical pseudopotential model for calculating band structures of simple and complex semiconductors","authors":"G. Pennington, N. Goldsman, J.M. McGarrity, F. Crowne","doi":"10.1109/SISPAD.2000.871250","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871250","url":null,"abstract":"The full zone band structure is often needed for adequate simulation of semiconductor devices. It is important for devices operating under high power and high fields and determines many material properties. The computational ease and good accuracy of the empirical pseudopotential method (EPM) make it the band structure method of choice for full-zone simulations. While the EPM works well for most diamond and zincblende semiconductors, it becomes less effective for more complicated structures with larger unit cells. For these materials, more EPM parameters must be fitted while less experimental data is usually available. Through the adaption of the nonlocal atomic model potential of Heine and Animalu (Phil. Mag. vol. 12, pp. 1249-1269, 1965), we have developed a model empirical pseudopotential which, by drastically reducing the fitting parameters needed, can extend the use of the EPM to semiconductors with large unit cells. The method is effectively applied to the band structure calculations of Si, C, 3C-SiC, 4H-SiC, and 6H-SiC here.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116317892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Direct solution of the Boltzmann transport equation in nanoscale Si devices 纳米硅器件中玻尔兹曼输运方程的直接解

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871204

K. Banoo, M. Lundstrom, R.K. Smith

引用次数: 30

Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools 利用快速高效的数值工具提取二维传输线(R,L,C,G)互连参数

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871214

F. Charlet, C. Bermond, S. Putot, G. Le Carval, B. Fléchet

引用次数: 19