2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

Modeling of direct tunneling current through gate dielectric stacks

Pub Date : 2000-10-01 DOI: 10.1109/SISPAD.2000.871242 S. Mudanai, Y.-Y. Fan, Q. Ouyang, A. Tasch, F. Register, D. Kwong, S. Banerjee

Two-qbit gates based on coupled quantum wires

Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871238 S. Reggiani, A. Bertoni, P. Bordone, R. Brunetti, C. Jacoboni, M. Rudan, G. Baccarani

First-principles-based predictive simulations of B diffusion and activation in ion implanted Si

Pub Date : 2000-09-06 DOI: 10.1109/SISPAD.2000.871196 S. Theiss, M. Caturla, T. Lenosky, B. Sadigh, T. Díaz de la Rubia, M. Giles, M. Foad