基于矩的BTE求解器的SOI相关仿真挑战

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871253

J.L. Egley, B. Polsky, B. Min, E. Lyumkis, O. Penzin, M. Foisy

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引用次数: 12

摘要

我们讨论了SOI模拟所特有的挑战。我们还展示了我们认为的热载流子扩散出漏极附近通道的证据，导致负微分电导率(NDC)，或SOI上I/sub D/-V/sub D/曲线中的瞬态区域。

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SOI related simulation challenges with moment based BTE solvers

We discuss challenges particular to SOI simulation. We also show evidence of what we believe is hot carrier diffusion out of the channel near the drain, giving rise to a negative differential conductivity (NDC), or a transient region in an I/sub D/-V/sub D/ curve on SOI.

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来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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