隧道二极管的快速三维MC模拟器

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871199

M. Wagner, H. Mizuta, K. Nakazato

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引用次数: 2

摘要

提出了一种具有横向约束和闸门的三维垂直隧道装置快速仿真器。通过三维射线追踪、蒙特卡罗集合平均和多网格泊松求解器，计算出穿过每个势垒的隧道电流，直到实现电流的自一致性。

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A fast three-dimensional MC simulator for tunneling diodes

A fast simulator is presented for 3D vertical tunneling devices with lateral confinement and gates. The tunneling current across each barrier is calculated using a combination of 3D ray tracing, Monte Carlo ensemble averaging, and a multi-grid Poisson solver, until self-consistency of the current is achieved.

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来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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