2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

筛选
英文 中文
Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs 6500V 4H-SiC功率dmosfet的仿真、制作与表征
Shiyan Li, Hao Liu, Run-Hua Huang, Y. Tao, Qiang Liu, Yun Li, S. Bai
{"title":"Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs","authors":"Shiyan Li, Hao Liu, Run-Hua Huang, Y. Tao, Qiang Liu, Yun Li, S. Bai","doi":"10.1109/IFWS.2017.8245995","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245995","url":null,"abstract":"4H-SiC power DMOSFETs with breakdown voltage higher than 8.0 kV has been successfully fabricated by using an 60μm-thick, 1.0×10<sup>15</sup> cm<sup>−3</sup> doped drift epilayer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC DMOSFETs were reported. A peak effective channel mobility of 20 cm<sup>2</sup>/Vs was extracted from a test MOSFET. A specific on-resistance of 80 mΩ-cm<sup>2</sup> were measured with at a V<inf>GS</inf> of 20V, a 32% reduction in R<inf>on sp</inf>, compared to a previously reported value. A leakage current of 12 μΑ was measured at a drain bias of 8.0 kV from a 4H-SiC DMOSFE with an active area of 1.0×10<sup>−2</sup> cm<sup>2</sup>. In this report, four new termination structures (T1-T3) were implemented in test PiN diodes and tested, for a reduction of termination length.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"239 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113994668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparison of visual fatigue visual function variations caused by different LED flickers and fluctuation depths 不同LED闪烁和波动深度引起视疲劳视觉功能变化的比较
Ya Guo, Wentao Hao, Xiaoxiang Yang, Pen Du, Jianqi Cai
{"title":"Comparison of visual fatigue visual function variations caused by different LED flickers and fluctuation depths","authors":"Ya Guo, Wentao Hao, Xiaoxiang Yang, Pen Du, Jianqi Cai","doi":"10.1109/IFWS.2017.8245989","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245989","url":null,"abstract":"Flicker is the lighting characteristic of electric light sources that is generally harmful to human health. In this study, subjects were set in lighting environments with different flickers, and required to finish the reading task within 45 minutes. Visual fatigue caused by different LED flickers and during the task were recorded and reflected by three visual function parameters: higher order aberrations (HOAs), modulation transfer function (MTF) and the ratio of accommodative convergence to accommodation ratio (AC/A). Significant differences were found to exist between the visual function variations of the subjects in lighting environments with different flickers, and people with higher flicker lighting showed lower variations of visual functions. It is manifested that LED luminaires with reduced flicker frequencies are more likely to cause visual fatigue.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115788396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of 4.5 mΩ-cm2, 1.2 kV 4H-SiC power DMOSFETs 4.5 mΩ-cm2, 1.2 kV 4H-SiC功率dmosfet的研制
Hao Liu, Shiyan Li, Run-Hua Huang, Y. Tao, S. Bai
{"title":"Development of 4.5 mΩ-cm2, 1.2 kV 4H-SiC power DMOSFETs","authors":"Hao Liu, Shiyan Li, Run-Hua Huang, Y. Tao, S. Bai","doi":"10.1109/IFWS.2017.8245998","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245998","url":null,"abstract":"In this paper, a 4.5 mΩ-cm<sup>2</sup>, 1.2 kV power DMOSFETs in 4H-SiC were reported. The devices utilized 10 um thick n-type epilayers with a doping concentration of 9×10<sup>15</sup> cm<sup>−3</sup> for drift layer. The active area size of 1.2 kV DMOSFET device is 4.5 ×10<sup>−2</sup>cm<sup>2</sup>. The device was able to support a blocking voltage of 1.5 kV with gate electrode shorted to the source electrode. The device shows a leakage current density of 3.8 uA/cm<sup>2</sup> at a block voltage of 1.2 kV. At room temperature, the 4H-SiC DMOSFET showed a specific on-resistance (R<inf>onsp</inf>) of 4.5 mΩ-cm<sup>2</sup>, at a gate bias of 20V (Eox=4.0 MV/cm), which was 44% reduction in Ron,<inf>sp</inf>, compared to a previously reported. The device demonstrated extremely fast, low loss swithing characteristics(td<inf>on</inf>=8ns, tr=14ns, td<inf>off</inf>=44ns, tf=43ns), which suggest that this device can offer significant improvement in switching performance over commercially available silicon power MOSFETs.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New packaging technology of highly stable “On-Chip” mode quantum dots LED 高稳定“片上”模式量子点LED封装新技术
Zhikuan Zhang, Danpeng Gao, Qibin Xing, Peipei Duan
{"title":"New packaging technology of highly stable “On-Chip” mode quantum dots LED","authors":"Zhikuan Zhang, Danpeng Gao, Qibin Xing, Peipei Duan","doi":"10.1109/IFWS.2017.8245962","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245962","url":null,"abstract":"An highly efficient and stable OC-QLED (“On-Chip” mode quantum dots light-emitting diode, OC-QLED) was obtained by the new LED packaging method with quantum dots encapsulation, Which was well-suitable for the backlight module whose color gamut value > NTSC 103%. Firstly, the results of orthogonal designed experiment showed that the encapsulation method of quantum dots was the most significantly factor on reliability and luminous efficiency of OC-QLED in the 4 factors (quantum dots coating method, encapsulation compound, curing temperature and heating time). Then, the reliability and luminous efficiency of sandwich structure OC-QLED encapsulation (the sandwich structure meant encapsulate compound with clear silicone, red QD and green QD was placed on the blue LED chip layerly) were better than those of other structures. The luminous efficiency of sandwich structure OC-QLED was reported to 81% of that of the LED with YAG: Ce phosphor under the same packaging setting. The OC-QLED brightness slightly decayed 9.5% under 85 °C and 85 % humidity after 500 hour burning test and 5000 mW/cm2 optical power density of the package, respectively.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122394736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs 一种改进的变温模型用于GaN基hemt的小信号特性分析
Hengshuang Zhang, Yang Lu, Ziyue Zhao, Chupeng Yi, Q. Zhu, Xiao-hua Ma, Y. Hao
{"title":"An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs","authors":"Hengshuang Zhang, Yang Lu, Ziyue Zhao, Chupeng Yi, Q. Zhu, Xiao-hua Ma, Y. Hao","doi":"10.1109/IFWS.2017.8246015","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246015","url":null,"abstract":"The elements of Ggsf and Ggdf are introduced into the conventional small-signal model to investigate their temperature characteristics for the first time. The equivalent circuit parameters as well as their temperature behaviors are analyzed and discussed. The imaginary parts of admittance parameters versus frequency under different temperature conditions are deeply studied. Good agreements between modeled and measured scattering parameters have been achieved at each temperature from 0.1GHz to 30GHz.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127992293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on the dichroic demultiplexing method in RGB-LED visible light communication system RGB-LED可见光通信系统中二向色解复用方法的研究
Mingxing Zhu, Dong Wang, Ailin Chen, Yixin Zhang, Yuncui Zhang, N. Zou
{"title":"Research on the dichroic demultiplexing method in RGB-LED visible light communication system","authors":"Mingxing Zhu, Dong Wang, Ailin Chen, Yixin Zhang, Yuncui Zhang, N. Zou","doi":"10.1109/IFWS.2017.8245974","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245974","url":null,"abstract":"Nowadays, LED has been used as a signal source of visible light communication system more widely, in the research of visible light communication technology, in order to obtain better lighting experience and higher data transmission rate, RGB-LED can used as the light source. Aiming at the demultiplexing problem of receiver in RGB-LED visible light communication system, a dichroic demultiplexing method based on dichroic mirrors is given in this paper. Firstly, the problem of light energy loss by the filter demultiplexing method that is conventionally used in RGB-LED visible light communication system is analyzed, and then a new dichroic demultiplexing unit is designed based on dichroic mirrors. Then optical structure of the dichroic demultiplexing unit and the generally used filter demultiplexing unit are simulated respectively by optical simulation software Tracepro, and the performance of the two demultiplexing methods has been compared. The result shows that compared with the system using filter demultiplexing method, the system using dichroic demultiplexing method can improve the light energy reaching the receiving surface nearly two times. Finally, the simulation analysis of communication performance is carried out, and the relationship between the bit error rate and the communication distance of two solutions is studied respectively. Simulation results show that, under the same bit error rate conditions, using the dichroic demultiplexing method can effectively extend the transmission distance of RGB-LED visible light communication system compared with the filter demultiplexing method. This paper provides a new implementation scheme for demultiplexing in RGB-LED visible light communication technology research.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129177572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal characterization of multi-chip light emitting diodes with thermal resistance matrix 热阻矩阵多芯片发光二极管的热特性研究
Huayong Zou, Li-Shuo Lu, Jiaqi Wang, Brian Shieh, S. Lee
{"title":"Thermal characterization of multi-chip light emitting diodes with thermal resistance matrix","authors":"Huayong Zou, Li-Shuo Lu, Jiaqi Wang, Brian Shieh, S. Lee","doi":"10.1109/IFWS.2017.8245969","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245969","url":null,"abstract":"The junction temperature of LEDs is important for its life, reliability and efficacy. The thermal resistance measurement can be implemented to obtain the junction temperature of a single-chip LED in different power consumptions and different environment temperatures. However, for the multichip applications such as Chip-on-Board (COB), multi-color and high-voltage LED packaging etc., only the average junction temperature can be obtained by the traditional steady thermal resistance measurement. In this paper, a thermal resistance matrix with thermal coupling factor is proposed to obtain the junction temperature of each chip in a multi-chip LED with different chip powers. In the case study, each element of the 4×4 thermal resistance matrix of a Red-Green-Blue-White (RGBW) four-chip LED is tested by a transient thermal tester (T3ster) to investigate the thermal coupling of chips one another. In addition, the thermal distribution of the LED package was analyzed by finite element analysis (FEA) simulation for comparison. It is shown that the thermal resistance matrix is effective for evaluation of junction temperature of each chip in the multi-chip LED package with a discrepancy less than 2.5% from measurement.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117113669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design of LED light parameters controlled based on WiFi 基于WiFi控制的LED灯参数设计
Meng Zhiguo, W. Haiyan
{"title":"Design of LED light parameters controlled based on WiFi","authors":"Meng Zhiguo, W. Haiyan","doi":"10.1109/IFWS.2017.8245972","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245972","url":null,"abstract":"Aiming at dimming light set is controlled by remote intelligent and is easily operated, the integration adjustment system of color and brightness has been set up on the widespread Wi-Fi. The whole system is mainly composed of mobile client and system control terminal. The mobile client is interface of user. The system control terminal hardware mainly adopts modular structure including power supply module, Wi-Fi module and control module. The application software has three operation interfaces in order to find, operate and control equipment. LED power supply can be controlled through mobile intelligent terminal software to complete basic operations such as turning on/ off the lights, dimming, and security setting. Light indicator can be adjusted by using PWM, and the color temperature can be adjusted by the proportion of the tricolor LED color collocation. Wi-Fi module can try to connect by phone transmission Wi-Fi. The result of examination is that the basic parameters, such as network name and password, can modify on the Wi-Fi devices after the connection is successful. Then IOT Manage software can choose interface of MCU module to realize data input and output operations, to realize adjustment the LED brightness, to realize adjustment color temperature on the tricolor LED lamp.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115633951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhancement-mode GaN HEMT power electronic device with low specific on resistance 低比电阻增强型GaN HEMT电力电子器件
Kong Cen, Zhou Jianjun, Kong Yuechan, Zhang Kai, Chen Tangsheng
{"title":"Enhancement-mode GaN HEMT power electronic device with low specific on resistance","authors":"Kong Cen, Zhou Jianjun, Kong Yuechan, Zhang Kai, Chen Tangsheng","doi":"10.1109/IFWS.2017.8246005","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246005","url":null,"abstract":"An enhancement-mode GaN HEMT on silicon substrate was obtained by using p-type GaN Cap. P-type GaN cap was obtained by Mg doping. The activation concentration of the p-GaN cap was 3e17cm<sup>−3</sup> with a thickness of 60nm. Selective dry etching was used to fabricate the device. Back metal and substrate thinning was used for improving the cooling capacity. A threshold voltage (V<inf>h</inf>) of 1.2V was obtained with a maximum forward gate voltage of 7V. An output current (I<inf>D</inf>) of 12A was obtained at V<inf>D</inf> and V<inf>G</inf> were 1V and 6V, respectively. The breakdown voltage of this device was larger than 350V, and the specific on resistance was 0.45 mΩ·cm<sup>2</sup>.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129896982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length 通过缩小鳍片长度提高AlGaN/GaN鳍片- hemt的跨导峰值和线性度
Meng Zhang, Minhan Mi, Bin Hou, Q. Zhu, Lixiang Chen, Jiaxin Zheng, Hengshuang Zhang, Ling Yang, Xiao-hua Ma, Y. Hao
{"title":"Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length","authors":"Meng Zhang, Minhan Mi, Bin Hou, Q. Zhu, Lixiang Chen, Jiaxin Zheng, Hengshuang Zhang, Ling Yang, Xiao-hua Ma, Y. Hao","doi":"10.1109/IFWS.2017.8246013","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246013","url":null,"abstract":"In this letter, AlGaN/GaN Fin-HEMTs with different fin configurations were fabricated. It is found that the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs are improved by the reduction of the fin length, which can be attributed to the modulation of source resistance by varying the fin length. The value and linearity of current cutoff frequency (fT) of AlGaN/GaN Fin-HEMTs also benefit from the improvement of the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132931511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信