2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献_第3页

Growth and electrical characterization of Al-N Co-doping SiC single crystals Al-N共掺杂SiC单晶的生长和电学特性

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245993

Xuejian Xie, Xiufang Chen, Yan Peng, Xiaobo Hu, Xiangang Xu, Peng Yu, Ruiqi Wang

{"title":"Growth and electrical characterization of Al-N Co-doping SiC single crystals","authors":"Xuejian Xie, Xiufang Chen, Yan Peng, Xiaobo Hu, Xiangang Xu, Peng Yu, Ruiqi Wang","doi":"10.1109/IFWS.2017.8245993","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245993","url":null,"abstract":"The growth of p-type SiC crystals with low resistivities should be investigated due to its application inn-channel Insulated Gate Bipolar Transistor (IGBT) fabrication. In this paper, the growth of 2 inch p-type 4H-SiC single crystals was carried out by conventional physical vapor transport (PVT) method with Al4C3 as Al dopant source. Results showed that the aluminum atoms can be effectively incorporated into SiC crystals and the color of Al-doped 4H-SiCcrystals was blue. With the increase of aluminum content in SiC crystals, the color of Al-doped SiC became darker and eventually opaque. At heavy Al doping condition, the polytype of 4H-SiC was not stable and the grown crystals easily turned to 6H-SiC polytype. In addition, by adopting Al-N co-doping technique, p-type SiC single crystals with stable 4H-SiC polytype were grown. However, due to the difficulty in controlling the release of Al, Al-N co-doped single crystals turned to n-p-n type conduction crystals. Noncontact resistivity measurement showed the minimum resistivity of p-type 4H-SiC wafers was about 4149 mfì-cm.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128674064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mid power LEDs for high lumen maintenance applications 中功率led用于高流明维护应用

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245966

S. S. Chang, Yanjun Zhang

引用次数: 0

GaN planar schottky barrier diode with cut-off frequency of 627 GHz GaN平面肖特基势垒二极管，截止频率为627ghz

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246011

Ning An, Qian Li, Jianping Zeng, Jun Jiang, Bin Lu, W. Tan

引用次数: 1

Experiments show that a light that can improve sleep quality in terms of hormone concentration 实验表明，光线可以在激素浓度方面提高睡眠质量

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245984

S. Zheng, M. Luo, M. Wang, Z. Ren, A. Bao, J. Qiang, H. Wang

引用次数: 0

Preparation of SIC powder and filler as heat-conducting glue on LED LED导热胶SIC粉末及填料的制备

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245991

Meng Zhiguo, W. Haiyan

引用次数: 0

Lateral AlGaN/GaN power diode with MIS-Gated hybrid anode for ultra-low turn-on voltage and high breakdown voltage 具有miss门控混合阳极的侧向AlGaN/GaN功率二极管，具有超低导通电压和高击穿电压

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246001

Qi Zhou, Kai Hu, Yi Yang, Qian Cheng, D. Wei, Changxu Dong, Wanjun Chen, Bo Zhang

{"title":"Lateral AlGaN/GaN power diode with MIS-Gated hybrid anode for ultra-low turn-on voltage and high breakdown voltage","authors":"Qi Zhou, Kai Hu, Yi Yang, Qian Cheng, D. Wei, Changxu Dong, Wanjun Chen, Bo Zhang","doi":"10.1109/IFWS.2017.8246001","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246001","url":null,"abstract":"In this letter, a novel AlGaN/GaN lateral power diode featuring a recessed Metal/Al2O3/ III-Nitride (MIS) Gated-hybrid-anode (MG-HAD) was experimentally demonstrated. The unique Gated-hybrid-anode design and accordingly the new current conduction mechanism enable the MG-HAD to deliver ultra-low forward turn-on voltage (VT) and reverse leakage for lowering the power consumption of the device. The typically ultra-low turn-on voltage of 0.3 V is obtained in the MG-HAD improved by 67 % compared with the fabricated-conventional AlGaN/GaN SBDs. Moreover, the ultra-low VT exhibits good uniformity with the minimum and maximum VT of 0.2 and 0.55 V, respectively. To the best of our knowledge, 0.2 V is the lowest VT of GaN power diodes up to date. On the other hand, a high breakdown voltage of over 1.1 kV at respectably low leakage current of 1 μA/mm was obtained in the proposed MG-HAD with anode-to-cathode spacing (LAC) of 20 μm. Besides the superior device performance, the proposed diode is fully-compatible with normally-off AIGaN/GaN MISFETs, which establish a basis for high-speed and high-efficiency full-GaN single-chip power ICs.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127487172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Study on large size and low leakage SiC diode detector for nuclear radiation detection 用于核辐射检测的大尺寸低漏SiC二极管探测器的研究

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245997

Ling Wang, Run-Hua Huang, A. Liu, Gang Chen, Tongtong Yang, S. Bai, Linyue Liu

引用次数: 2

The effects on the growth of pea seedlings under different red and blue photons ratio Pc-LEDs lighting 不同红蓝光子比pc - led照明对豌豆幼苗生长的影响

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245978

Tingting Li, Haibo Rao, Weibing Zheng, Qinghao Meng

{"title":"The effects on the growth of pea seedlings under different red and blue photons ratio Pc-LEDs lighting","authors":"Tingting Li, Haibo Rao, Weibing Zheng, Qinghao Meng","doi":"10.1109/IFWS.2017.8245978","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245978","url":null,"abstract":"This paper presents a new method to provide the red and blue light for plants with red phosphor-converted blue LED chips, or pc-LEDs. By adjusting the proportion of phosphor powder in silicone binder of coating layer to realize the different red to blue ratio in plant lighting application. In this work, the effect of light on the growth of pea seedlings was studied under the condition of which the Photosynthetic Photon Flux Density (PPFD) is 70μmol·m−2·s−1, the red and blue photons ratios is 2.3: 1, 3: 1, 4: 1, 6: 1, 7: 1, 8: 1, and 9: 1 and the photoperiod is 14h. The pea seedlings were cut on the 20th day, the experiment results showed that the pea seedling have the maximum height, stem and leaf dry weight at the red to blue photon ratio 9: 1. The chlorophyll content reached the maximum quantity under the red and blue photons ratios 7: 1. This experiment convinced the feasibility of pc-LEDs for plant illumination, and verified that the red light could promote the elongation of stem and the accumulation of organic matter, while, the red and blue photons ratios 7: 1 is more conducive to the synthesis of chlorophyll.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121861900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Enhancement-mode AlGaN/GaN with plasma oxidation technology 等离子体氧化技术增强模式AlGaN/GaN

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246012

Minhan Mi, Bin Hou, Meng Zhang, Xiao-hua Ma, Y. Hao

引用次数: 0

Effect different spectral LED on photosynthesis and distribution of photosynthate of cherry tomato seedlings 不同光谱LED对樱桃番茄幼苗光合作用及光合产物分布的影响

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245979

He Wei, Wang Xiaoxiao, Pu Min, Li Xiaoying, Gan Lijun, X. Zhigang

{"title":"Effect different spectral LED on photosynthesis and distribution of photosynthate of cherry tomato seedlings","authors":"He Wei, Wang Xiaoxiao, Pu Min, Li Xiaoying, Gan Lijun, X. Zhigang","doi":"10.1109/IFWS.2017.8245979","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245979","url":null,"abstract":"Adopting 14C isotope tracer and microradioautography technique, photosynthesis, photosynthate distribution pattern of cherry tomato seedlings were investigated under dysprosium lamp (white light control, C) and five LED light treatments designated as red (R), blue (B), orange (Y), green (G), red and blue (RB) with the same photosynthetic photon flux density (PPFD) for 30 days. Compared with C, the Pn and stomata density were increased under RB and B and was stable under R, while those of Y and G were reduced. The changes of Pn and growth in cherry tomato seedlings were related with the photosynthetic pigment content, stomata number, photosynthate distribution and light energy regulation of photo system II. Higher photosynthetic pigment content and more stomata number under light treatments had higher the net photosynthetic rate (Pn). Furthermore, the suitable photosynthate distribution and translocation had feedback impact on the photosynthesis. The ratios of photosynthate distributed in leaves of RB, B and R were significantly higher than those of other treatments. The photosynthate labeled by 14C transported to the leaves and roots of the RB and B treatments, while Y and G treatments still kept the 14C in the labeled leaf. The result suggested that growth of cherry tomato seedlings was significantly affected by LED lights, and the distribution pattern of photosynthate would be changed in the seedlings. The better growth of RB was related with the more photosynthetic pigment content, more stomata number and reasonable photosynthate distribution in cherry tomato seedlings.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"503 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123037280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8