2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

{"title":"Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures","authors":"Kai Tian, Jinwei Qi, Zhangsong Mao, Songquan Yang, Wenjie Song, Mingchao Yang, Anping Zhang","doi":"10.1109/IFWS.2017.8245994","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245994","url":null,"abstract":"In this paper, we report on the static and switching performance of 1.2kV 4H-SiC planar MOSFETs, 4H-SiC trench MOSFETs and Si IGBT over a wide temperature range of 90K to 493K. The influence of temperature upon device on-resistance, transfer characteristics and switching characteristics are characterized and analyzed. For the first time, trap related dynamic on-resistance degradation for all devices is investigated at cryogenic temperatures, especially in 4H-SiC trench MOSFET. Effects of interface traps on on-resistance degradation are examined.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"7 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123317199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel","authors":"Zhiyuan Yang, Lili Zhao, Jing Zhang, Li Sun, F. Yu, Xiufang Chen, Xiu-feng Cheng, Xiangang Xu, Zhengping Wang, Xian Zhao","doi":"10.1109/IFWS.2017.8245992","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245992","url":null,"abstract":"Graphene has been expected for use in various disciplines due to its super properties such as high carrier mobility, chemical stability, optical transparency and low density etc. Recently, chemical vapor deposition (CVD) and epitaxial growth (EG) on SiC have been demonstrated the most successful methods for growing high quality graphene film. However, the CVD method relies on metallic substrates and the grown graphene has to be stripped off and transferred to the insulating substrate for further applications. Multilayer graphene can be directly grown on SiC wafer using epitaxial growth method, but the buffer layer between SiC substrate and graphene would reduce the carrier mobility of graphene and impede the application of the graphene. In this work, we combined the advantages of the above two methods and proposed a novel and feasible method for growing graphene on Si-face of 6H-SiC by diffusion and precipitation of the inner and external carbon sources. A layer of nickel was deposited on the surface of 6H-SiC, which can catalyze the synthesis of graphene. SEM and Raman spectra results confirmed the formation of high-quality graphene and the grown graphene was single layer. The graphene was obtained within just 10min, more than one order of magnitude faster than that of the graphene grown on 6H-SiC substrates by traditional EG method. More interesting, the annealing temperature of this method was 200∼300 °C, lower than that of the traditional EG method. The directly grown graphene could be compatible with the semiconductor technique, benefit for the applications of graphene-based microelectronic devices.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116083098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The GaN trench gate MOSFET with floating islands","authors":"Lingyan Shen, Xinhong Cheng, Dongliang Zhang, Li Zheng, Dawei Xu, Ziyue Gu, R. Qian, Yuehui Yu","doi":"10.1109/IFWS.2017.8246000","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246000","url":null,"abstract":"A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in the drift region, which can suppress the electric field peak at the bottom of the gate trench during the blocking state and prevent premature breakdown in the gate oxide, is proposed and investigated by TCAD simulations. The influence of the thickness, position, doping concentration and length of the FLI on the breakdown voltage (BV) and specific on-resistance (Ron, sp) is studied, providing useful guidelines for the design of this new type of device. Using optimized parameters for the FLI, the GaN FLI TG-MOSFET reaches a BV as high as 2464V with a Ron, sp of 3.0 mΩ+ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to the theoretical limit for GaN devices.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116744020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and fabrication of 3300V/30A 4H-SiC JBS diode","authors":"Chen Zheng, Yang Tongtong, Huang Runhua, Wang Ling, Chen Guran, Yang Lijie, Bai Song","doi":"10.1109/IFWS.2017.8245996","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245996","url":null,"abstract":"The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm−3 and a thickness of 33μm is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manipulation of green LED in chicken egg incubation","authors":"X. Wang, B. Li, Q. Tong","doi":"10.1109/IFWS.2017.8245980","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245980","url":null,"abstract":"This study was conducted to evaluate the effect of a 12 hours light, 12 hours dark (12L: 12D) photoperiod of green light during day 1 to day 18 of incubation time, on embryo growth and the hatch process. In the test group, monochromatic light was provided by a total of 204 green LEDs (522nm) mounted in a frame which was placed above the top tray of eggs to give even spread of illumination. The control group has no light-dark cycle. Four batches of eggs (n=300 per group per batch) from fertile Ross 308 broiler breeders were used in this experiment. The beak length and crown-rump length of embryos incubated under green light were significantly longer than that of control embryosat day10and day 12, respectively (P<0.01). Furthermore, green light exposed embryos had a longer third toe length compared to control embryos at day 10, day14 and day17 (P=0.02). The individual hatching time of the light exposure focal chicks (n=33) was 3.4h earlier (P=0.49) than the control focal chicks (n=36). The results of this study indicate that green light accelerates embryo development and results in earlier hatching.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124002960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SiC-graphene heterojunction ultraviolet detector","authors":"Hui Guo, Burui Liu, Beiju Huang, Hongda Chen","doi":"10.1109/IFWS.2017.8246020","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246020","url":null,"abstract":"In our study, we report a ultraviolet photodetector based on SiC-graphene heterojunction with P-doped graphene and N-doped 4H-SiC. The device combines the advantages of the two materials, both the low dark current owing to the P-N heterojunctions and the befitting magnitude of responsivity of the conventional PIN UV photodetectors are obtained. The device consists of positive electrode, single layer P-doped graphene, N⁻-doped SiC layer, N-doped buffer layer, N⁺-doped substrate and back electrode, from top to bottom. Initially, a 0.5um N⁻-doped SiC epitaxial layer was grown (N<inf>d</inf>=1×10¹⁶cm⁻³) on a 2um N+-doped buffer layer on a N+-doped 4H-SiC substrate. SiC mesas were etched 1um into the interior with a litho-graphically patterned Ni mask and SF<inf>6</inf>/O<inf>2</inf>-based inductively coupled plasma (ICP) etch. Then the back ohmic contact electrode was formed with Ni by high temperature annealing. Single layer P-doped graphene was then transformed onto the devcice surface with the graphene mesa etched by O<inf>2</inf>-based reactive ion etching(RIE) etch. Ti/Au was used as the ohmic contact for graphene regions. After the device fabrication is finished, the diode current — voltage (I-V) characteristics were tested under reverse biased voltage from 0V to 6 V at room temperature. The dark current of the device is at the magnitude of 10⁻¹⁴A∼10⁻¹²A. The responsivity from the illumimation of different wavelengths of lights under reverse bias of 1V was measured. The responsivity peak lies near the 270nm wavelength, and the maximum response is 0.032A/W. Since the doping concentration of the N⁻-doped SiC layer is 1×10¹⁶cm⁻³, it is too large to completely depleted under 1V reverse bias voltage. These data do not reflect the best performance of the device. We then test the device under 5 V reverse bias from the illumimation of 270nm wavelength UV irradiation, the current reached 1 × 10⁻⁸A magnitude, this means that the responsivity is raised by an order of magnitude, which beyond the level of traditional PIN ultraviolet photodetectors.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133958253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Daylighting simulation and analysis of buildings with dynamic photovoltaic window shading elements","authors":"Y. Gao, J. Dong, O. Isabella, M. Zeman, G.Q. Zhang","doi":"10.1109/IFWS.2017.8245973","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245973","url":null,"abstract":"Photovoltaic (PV) windows with shading devices benefit buildings in terms of power generation, daylighting control, glare protection, etc. In order to harvest the maximum solar energy from the window area, solar tracking is applied to the PV shading elements. The complicated movement trajectories and dynamic daylighting are difficult to simulate by conventional methods. In this work, we introduce an optical simulation method of daylighting in complex building environment using DIVA and Grasshopper, which are plugins of Rhinoceros, a commercial 3D computer graphics and computer-aided design (CAD) software. An algorithmic model of the PV blinds is built by Grasshopper based on amodified model of a reference office. Then DIVA is applied to evaluate the daylighting performance of the dynamic and static PV blinds. Simulation results show that the working plane reveals higher illuminance level and lower glare level with the dynamic PV blinds than that with their static counter parts. It is demonstrated that the proposed simulation method can deal with the daylighting evaluation of complex and dynamic building environment.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134045752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Discussion on development strategy of healthy lighting industry","authors":"Lan Wei, Yousan Chen, Qunqiang Guo, Yanhui Li, Kaijun He","doi":"10.1109/IFWS.2017.8245988","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245988","url":null,"abstract":"With the gradually increasing in the cognition of the light biological effects, the technological progress of LED is constantly meeting people's pursuit of light quality, but the technical indexes proposed in luminosity, chroma, light quality evaluation and standard of the traditional lighting theory are different from people's subjective visual effect. Furthermore, people's favorite chromaticity coordinates of light source are not in the Planck blackbody radiation curve. More and more experimental results show that the traditional lighting theory is in urgent need of innovation. Starting from human's following the natural law and rulet, the paper probes into the mechanism of action of light on human body (eyes, physiology and psychology) and analyzes the impact of different spectral intensity and combination on human endocrine hormone in different time based on light regulation of human biological rhythm. It conducts organic combination of illumination and the changes of human endocrine biological parameters to detect human “photo-biomarkers” through qualitative and quantitative analysis and gradually sheds light's regulation on human health, and then put forwards the definition, localization and further development of health lighting.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128072420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The thermal simulation of high power density LED light source","authors":"Zheng Huaiwen, Yang Hua, Yi Xiaoyan, Wang Junxi, Li Jinmin","doi":"10.1109/IFWS.2017.8246003","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246003","url":null,"abstract":"This paper includes discussions concerning the thermal structure and heat dissipation way of high power density LED light source in order to solve the problems such as short life and low reliability which are coursed by the high heat resistance. The software ANSYS is applied to simulate the high power density LED light source. Various chip types, chip arrangements, chip spacing and different interface materials are analyzed and compared in the article. In addition, the key packaging technology of high power density LED light source is researched. The relationship of total power, power density, luminous efficiency and chip package scale are also discussed in order to provide optimized solution for the high power density LED light source.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132583633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Leakage current reduction in planar AlGaN/GaN MISHEMT with drain surrounded by the gate channel","authors":"Hui Sun, Jianguo Chen, Maojun Wang, Meihua Liu, Xinnan Lin, Dongmin Chen","doi":"10.1109/IFWS.2017.8246006","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246006","url":null,"abstract":"A new planar MISHEMT structure is proposed with the drain surrounded (D-S) by the gate channel. The gate channel serves as the stop-ring of the drain voltage, eliminating the damages from the high voltage on the mesa edge and isolation area. As a result, the leakage of the D-S MISHEMT is found to be reduced by almost 3 orders comparing with the source surrounded (S-S) MISHEMT. A saturated output current density of 740 mA/mm and an ON-resistance of 13.09 Ω-mm are obtained for device with LG/LGS/LGD/WC = 1.5/5/20/250 μm. Meanwhile, the degradation of dynamic ON-resistance and off-state breakdown performance are investigated in both D-S and S-S MISHEMT, which indicates excellent reliability of the D-S MISHEMT.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133491114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}