Design and fabrication of 3300V/30A 4H-SiC JBS diode

Abstract

The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm−3 and a thickness of 33μm is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V.