2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - 最新文献

Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures

Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245994 Kai Tian, Jinwei Qi, Zhangsong Mao, Songquan Yang, Wenjie Song, Mingchao Yang, Anping Zhang

A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel

Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245992 Zhiyuan Yang, Lili Zhao, Jing Zhang, Li Sun, F. Yu, Xiufang Chen, Xiu-feng Cheng, Xiangang Xu, Zhengping Wang, Xian Zhao

The GaN trench gate MOSFET with floating islands

Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246000 Lingyan Shen, Xinhong Cheng, Dongliang Zhang, Li Zheng, Dawei Xu, Ziyue Gu, R. Qian, Yuehui Yu

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