Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures

Abstract

In this paper, we report on the static and switching performance of 1.2kV 4H-SiC planar MOSFETs, 4H-SiC trench MOSFETs and Si IGBT over a wide temperature range of 90K to 493K. The influence of temperature upon device on-resistance, transfer characteristics and switching characteristics are characterized and analyzed. For the first time, trap related dynamic on-resistance degradation for all devices is investigated at cryogenic temperatures, especially in 4H-SiC trench MOSFET. Effects of interface traps on on-resistance degradation are examined.