低温和高温下1.2 kV 4H-SiC功率mosfet和Si igbt的特性

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI:10.1109/IFWS.2017.8245994

Kai Tian, Jinwei Qi, Zhangsong Mao, Songquan Yang, Wenjie Song, Mingchao Yang, Anping Zhang

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引用次数: 9

摘要

在本文中，我们报告了1.2kV 4H-SiC平面mosfet, 4H-SiC沟槽mosfet和Si IGBT在90K至493K的宽温度范围内的静态和开关性能。对温度对器件导通电阻、传递特性和开关特性的影响进行了表征和分析。首次在低温下研究了所有器件的陷阱相关的动态导通电阻退化，特别是在4H-SiC沟槽MOSFET中。研究了界面陷阱对导通电阻退化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures

In this paper, we report on the static and switching performance of 1.2kV 4H-SiC planar MOSFETs, 4H-SiC trench MOSFETs and Si IGBT over a wide temperature range of 90K to 493K. The influence of temperature upon device on-resistance, transfer characteristics and switching characteristics are characterized and analyzed. For the first time, trap related dynamic on-resistance degradation for all devices is investigated at cryogenic temperatures, especially in 4H-SiC trench MOSFET. Effects of interface traps on on-resistance degradation are examined.

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来源期刊

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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