3300V/30A 4H-SiC JBS二极管的设计与制作

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI:10.1109/IFWS.2017.8245996

Chen Zheng, Yang Tongtong, Huang Runhua, Wang Ling, Chen Guran, Yang Lijie, Bai Song

{"title":"3300V/30A 4H-SiC JBS二极管的设计与制作","authors":"Chen Zheng, Yang Tongtong, Huang Runhua, Wang Ling, Chen Guran, Yang Lijie, Bai Song","doi":"10.1109/IFWS.2017.8245996","DOIUrl":null,"url":null,"abstract":"The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm−3 and a thickness of 33μm is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and fabrication of 3300V/30A 4H-SiC JBS diode\",\"authors\":\"Chen Zheng, Yang Tongtong, Huang Runhua, Wang Ling, Chen Guran, Yang Lijie, Bai Song\",\"doi\":\"10.1109/IFWS.2017.8245996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm−3 and a thickness of 33μm is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V.\",\"PeriodicalId\":131675,\"journal\":{\"name\":\"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFWS.2017.8245996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFWS.2017.8245996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了一种SiC 3300V/30A JBS二极管的设计、制造和性能表征。在制造过程中采用了限场环(FLR)端接。对FLR技术的最佳参数进行了数值模拟。最后采用2.7e15cm−3的掺杂和33μm的厚度作为漂移层。在FLR端部有40个环，典型击穿电压为3600V。当二极管正向偏置在2.1V时，得到30A正向电流。

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Design and fabrication of 3300V/30A 4H-SiC JBS diode

The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm−3 and a thickness of 33μm is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V.

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2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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