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2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

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W-band AlGaN/GaN MMIC PA with 3.1W output power w波段AlGaN/GaN MMIC PA，输出功率3.1W
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246016
Wu Shaobing, Guo Fangjin, Gao Jianfeng, W. Weibo, Li Zhonghui, Huang Nianning, Chen Tangsheng
{"title":"W-band AlGaN/GaN MMIC PA with 3.1W output power","authors":"Wu Shaobing, Guo Fangjin, Gao Jianfeng, W. Weibo, Li Zhonghui, Huang Nianning, Chen Tangsheng","doi":"10.1109/IFWS.2017.8246016","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246016","url":null,"abstract":"A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a small signal gain of greater than 18 dB and an output power of greater than 2.5W from 88GHz to 93GHz with an associated power gain of greater than 15 dB. Moreover, it achieves a peak output power of 3.1W (34.9dBm) at 91GHz in continuous-wave mode, with an associated power density of 3.23W/mm. Most notably, it is the first time that the peak output power and power density exceed 3W and 3W/mm in AlGaN/GaN HEMT at W-band simultaneously.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127319927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
DC and RF characteristic comparison of recessed-gate AlGaN/GaN HEMTs with CF4-based and Ch-based plasma gate recessing process 基于cf4和基于ch的等离子体栅极凹陷工艺的AlGaN/GaN hemt的直流和射频特性比较
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246014
Bin Hou, Q. Zhu, Lixiang Chen, Xinchuang Zhang, Hengshuang Zhang, Meng Zhang, Minhan Mi, Jiejie Zhu, Ling Yang, Xiaowei Zhou, Xiao-hua Ma, Y. Hao
{"title":"DC and RF characteristic comparison of recessed-gate AlGaN/GaN HEMTs with CF4-based and Ch-based plasma gate recessing process","authors":"Bin Hou, Q. Zhu, Lixiang Chen, Xinchuang Zhang, Hengshuang Zhang, Meng Zhang, Minhan Mi, Jiejie Zhu, Ling Yang, Xiaowei Zhou, Xiao-hua Ma, Y. Hao","doi":"10.1109/IFWS.2017.8246014","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246014","url":null,"abstract":"CF<inf>4</inf>-based plasma recessed gate (CF<inf>4</inf>-RGD) and Cl<inf>2</inf>-based plasma recessed gate (Cl<inf>2</inf>-RGD) AlGaN/GaN HEMTs were fabricated in this paper. CF<inf>4</inf>-RGD showed higher DC and RF performance with a peak G<inf>m</inf> of 383 mS/mm and f<inf>T</inf>/f<inf>max</inf> of 49/153GHz than Cl<inf>2</inf>-RGD with a peak G<inf>m</inf> of 352 mS/mm and f<inf>T</inf>/f<inf>max</inf> of 45/118GHz. Due to the outstanding and stable characteristics of CF4-RGD, CF4 plasma is a promising candidate for the gate recessing process in fabrication of GaN-based microwave applications.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131717075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LED device fault diagnosis base on neural network and SVM model analysis 基于神经网络和支持向量机模型分析的LED器件故障诊断
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245971
Haisu Jiang, Qingzhong Ma, Fuqin Yang, Mingming Shen
{"title":"LED device fault diagnosis base on neural network and SVM model analysis","authors":"Haisu Jiang, Qingzhong Ma, Fuqin Yang, Mingming Shen","doi":"10.1109/IFWS.2017.8245971","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245971","url":null,"abstract":"LED as the 4th generation new energy lighting device, it is widely used in many lighting fields with its green environmental protection, energy saving, long life and high reliability. It is of great significance to study the common fault diagnosis technology of LED devicesto determine the fault point and improve the design of LED devices. This article from the common failure mode of the LED devices, combined with the monitoring the related parameters of the LED devices, use based on BP neural network and SVM algorithm, analyze the fault diagnosis of LED Devices, concluded from the results, the SVM method in effective under the condition of small sample has good diagnosis effect.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134028719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Spectral design for potential health lighting based on combined circadian and visual effects 基于结合昼夜节律和视觉效果的潜在健康照明的光谱设计
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245982
Q. Dai, W. Shi, Zhuo Wang
{"title":"Spectral design for potential health lighting based on combined circadian and visual effects","authors":"Q. Dai, W. Shi, Zhuo Wang","doi":"10.1109/IFWS.2017.8245982","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245982","url":null,"abstract":"Light, as a basic need of human being, provides not only vision, but also non-visual effects such as regulating the circadian system. While the traditional lighting design only focuses on the visual aspect, we recently proposed a novel health-lighting design space that takes consideration of both visual and circadian aspects. It allows the exploration of combinations of circadian stimulus and visual brightness appearance. In this work, we first demonstrate that with monochromatic LEDs, almost any combination of circadian & visual impacts can be achieved; with the color constraints from the requirement of general illumination and the purpose of adjusting the lighting's circadian effect during the day, an LED color mixing and tuning solution is shown to optimize the achievable gamut in the circadian-versus-visual lighting design space. As an example of applying this concept, we demonstrate that our RGBW LED color-mixing solution can be used to mimic both visual and circadian characteristics of the measured dynamic daylight for both sunny and cloudy weather conditions.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134249367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement of properties for nonpolar a-plane p-AlGaN with Mg-delta doping technique 用mg - δ掺杂技术改善非极性a-平面p-AlGaN的性能
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246017
Zili Wu, Xiong Zhang, Q. Dai, Jianguo Zhao, Aijie Fan, Yiping Cui
{"title":"Improvement of properties for nonpolar a-plane p-AlGaN with Mg-delta doping technique","authors":"Zili Wu, Xiong Zhang, Q. Dai, Jianguo Zhao, Aijie Fan, Yiping Cui","doi":"10.1109/IFWS.2017.8246017","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246017","url":null,"abstract":"The Mg-delta-doping technique was employed in the epitaxial growth of the nonpolar a-plane p-AlGaN films on semi-polar r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The structural and electrical properties of the nonpolar a-plane p-AlGaN epi-layers were characterized with secondary ion mass spectroscopy (SIMS), high-resolution X-ray diffraction (HR-XRD), and Hall effect measurement, respectively. The characterization results demonstrated that the crystalline quality, and the efficiency of Mg incorporation in the nonpolar a-plane p-AlGaN films could be improved significantly by optimizing the pulse time of Cp2Mg mass flow in the Mg-delta-doping process. In fact, a hole concentration as high as 1.4×1018 cm−3 under an average Mg incorporation density of ∼1 × 1019 cm−3 was achieved.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130961104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High color rendering index and tunable color temperature of white light emitting diodes with yellow emitting graphene quantum dots coated 涂覆黄色石墨烯量子点的白光二极管具有高显色指数和可调色温
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245965
Jipeng Zhou, Luqiao Yin, Jianhua Zhang, Liang Wang
{"title":"High color rendering index and tunable color temperature of white light emitting diodes with yellow emitting graphene quantum dots coated","authors":"Jipeng Zhou, Luqiao Yin, Jianhua Zhang, Liang Wang","doi":"10.1109/IFWS.2017.8245965","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245965","url":null,"abstract":"In this work, we report the hydrothermal synthesis of yellow emitting graphene quantum dots (GQDs). The as prepared GQDs were fixed in polymer-silica hybrid matrix, deposited on InGaN blue chip and formed as transparent flexible color conversion layer of white light emitting diodes (WLED). The properties of GQDs and devices were also investigated, and we found the GQDs exhibit stable fluorescence in the ethanol solution. The as prepared GQDs WLED shows extremely high color rendering index (CRI) reaching up to 92. And in this work we realized the correlated color temperature (CCT) tunable (from 3200K to 9200K) by adjusting the thickness of GQDs color conversion layer or the concentration of GQDs solution. The color coordinates of WLEDs distribute close to the Planckian locus. These results indicate that the GQDs might be a promising candidate as yellow-emitting phosphor for white LEDs.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116494856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of AlGaN/GaN HEMTs grown and fabricated on sapphire substrate with AIN and GaN nucleation layers 蓝宝石基底上AIN和GaN成核层生长和制备的AlGaN/GaN hemt的比较
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246009
N. Gao, Y. L. Fang, J. Y. Yin, B. Wang, Y. M. Guo, Z. Z. He, G. Gu, H. Y. Guo, Z. Feng, S. Cai
{"title":"Comparison of AlGaN/GaN HEMTs grown and fabricated on sapphire substrate with AIN and GaN nucleation layers","authors":"N. Gao, Y. L. Fang, J. Y. Yin, B. Wang, Y. M. Guo, Z. Z. He, G. Gu, H. Y. Guo, Z. Feng, S. Cai","doi":"10.1109/IFWS.2017.8246009","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246009","url":null,"abstract":"AlGaN/GaN heterostructure materials and HEMTs with AlN and GaN nucleation layers were grown and fabricated on sapphire substrates respectively. AlGaN/ GaN heterostructure material with AlN nucleation layer shows lower dislocation densities than the counterpart sample with GaN nucleation layer verified by XRD omega-scan measurement. Oxygen impurity in the sample with AlN nucleation layer has a lower concentration proved by the SIMS profiles. The lower dislocation density and oxygen impurity concentration in AlGaN/ GaN heterostructure material with AlN nucleation layer result in better device performance. AlGaN/GaN HEMT device with AlN nucleation layer shows three orders of magnitude lower leakage current than that with GaN nucleation layer. Pulse I-V characterizations suggest that traps in buffer have a less impact on the device with AlN nucleation layer.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123161871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A wearable illuminance recorder for measuring visual and non-visual effects of light simultaneously 一种可穿戴照度记录仪，用于同时测量光的视觉和非视觉效果
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245990
Fan Yang, Wenqing Fang, Chaopu Yang, Zhenquan Lai, Xu Zhang
{"title":"A wearable illuminance recorder for measuring visual and non-visual effects of light simultaneously","authors":"Fan Yang, Wenqing Fang, Chaopu Yang, Zhenquan Lai, Xu Zhang","doi":"10.1109/IFWS.2017.8245990","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245990","url":null,"abstract":"This project is developing a wearable illuminance recorder controlled by a single-chip computer. It will measure the visual effects and non-visual effects of light simultaneously. The illumination recorder consists of two light sensors, a preamplifying unit and a Microcontroller and so on. At present, the manufacture of visual and non-visual sensors has been completed, and the preliminary test results of the light source have been obtained, among which a special non-visual sensor are homemade by ourselves. This kind of sensor was not reported before.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127293899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Degradation of InGaN/GaN laser diodes investigated by cross-sectional electron beam induced current imaging 横断面电子束诱导电流成像研究了InGaN/GaN激光二极管的降解
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245970
H. Xiu, E. Thrush, L. Zhao, A. Phillips, C. Humphreys
{"title":"Degradation of InGaN/GaN laser diodes investigated by cross-sectional electron beam induced current imaging","authors":"H. Xiu, E. Thrush, L. Zhao, A. Phillips, C. Humphreys","doi":"10.1109/IFWS.2017.8245970","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245970","url":null,"abstract":"In this study, the degradation mechanism of InGaN/GaN laser diodes has been investigated using cross-sectional electron beam induced current (EBIC) imaging, combined with scanning electron microscopy (SEM). By comparing the EBIC images of an untested and a degraded laser from the same laser bar, we show that the p-n junction position of the degraded laser has shifted towards the n-doped region and the carrier interface at the p-side of the p-n junction of the degraded laser became less sharp than in the original laser diode. This p-n junction position shift leads to carrier compensation in the active and the n-doped regions, which subsequently leads to an imbalance in the hole and electron concentrations in the active region and a reduction in the emission efficiency of InGaN quantum wells. This occurs because a displacement of the p-n junction, from its optimal position, results in a minority carrier loss, as the latter has a higher probability of recombining non-radiatively en-route to the active region. The minority carrier diffusion lengths were also calculated using two different theoretical models. The results show that the electron diffusion length in the p-doped region in the degraded laser is longer than that in the untested laser. The reason may also be related to the compensation effect or the reduced recombination rate in the degraded laser, which will result in an increase in the threshold current of the laser and the degradation of the laser.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122062949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental assessment of self-heating in AlGaN/GaN HEMTs for microwave application 微波应用中AlGaN/GaN hemt自热特性的实验评估
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246010
Mei Wu, Q. Zhu, Minhan Mi, Ling Yang, Xiao-hua Ma, Y. Hao
{"title":"Experimental assessment of self-heating in AlGaN/GaN HEMTs for microwave application","authors":"Mei Wu, Q. Zhu, Minhan Mi, Ling Yang, Xiao-hua Ma, Y. Hao","doi":"10.1109/IFWS.2017.8246010","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246010","url":null,"abstract":"Self-heating effects in AlGaN/GaN high-electron mobility transistors grown on SiC have been evaluated from room temperature to 200 °C. The channel temperature was extracted by a fast and simple electrical method combined dc with double-pulsed measurements, which was based on the difference in drain current between two measurements. To validate this technique, the experimental results have been compared with two other electrical methods. FEM thermal simulation has also been applied to demonstrate its accuracy. The thermal contribution of the complex interfacial issue was approximated by an effective TBR layer, which thermal conductivity is temperature dependent and tuned to match the experimental results.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130159271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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