2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献_第5页

Tunable LED modules based on CSP-COB 基于 CSP-COB 的可调谐 LED 模块

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245963

Chong-yu Shen, Jianqing Shi, Jiangen Zhao, Wei Tang, G. Sun, Jay GuoxuLiu

引用次数: 0

Human interpretation of light diffuseness 人类对光漫射的解释

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245987

L. Xia, Tingting Zhang, Xiaofeng Liu, S. Pont

引用次数: 0

Research on spatial distribution of brightness perception: The optimal experimental sampling parameters 亮度感知空间分布研究:最优实验采样参数

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/ifws.2017.8245983

Yajing Ji, Gang Wang, Hai-Qiang Shen

{"title":"Research on spatial distribution of brightness perception: The optimal experimental sampling parameters","authors":"Yajing Ji, Gang Wang, Hai-Qiang Shen","doi":"10.1109/ifws.2017.8245983","DOIUrl":"https://doi.org/10.1109/ifws.2017.8245983","url":null,"abstract":"The study was a previous research for spatial distribution characteristics of the spectral luminous efficiency function in the whole field of vision. Psychophysical experiments were conducted to investigate the spatial distribution of brightness perception and the optimal experimental sampling parameters by direct brightness-matching method. Two visual stimuli, a central fixation point and a peripheral target, were presented in different combinations of shape, color, luminance, diameterandspatial position, to explore the sensitivity of human eyes. The compared target was gradually moved away from the position adjacent to the fixation point. After moving of every sampling step, subjects responded whether the brightness of two stimuli were the same. Statistical analyses showed theconclusions as follows. (1) Blue was the most sensitive color to eyes, under the condition that diameters and directions of the stimuli were the same. (2) Under the condition that colors and directions were the same, the smaller diameter caused the more sensitive perception. (3) The visual perception of the human eye had spacialdistribution characteristics: the left visualfield was more sensitive than the superior field; the inferior field was more sensitive than the superior field; and under partially parametricalconditionsthe left field was more sensitive than the inferior field. These discrepancies of the brightness sensitivity in space domain could be explained by the heterogeneous photoreceptor distribution. Finally, we obtainedthe optimal combination ofparametrical levels ofstimuli for the spatial sampling of the brightness perception: blue color, diameter of 0.5° visual angle.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127054867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A theoretical study of two novel SiC and GaN ultraviolet avalanche drift detectors with front-illumination 两种新型前置照明SiC和GaN紫外雪崩漂移探测器的理论研究

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246018

J. Yuan, W. Ni, X. Huang, M. Xu, J. Zhang, X. Niu, M. S. Li, J. J. Dou

{"title":"A theoretical study of two novel SiC and GaN ultraviolet avalanche drift detectors with front-illumination","authors":"J. Yuan, W. Ni, X. Huang, M. Xu, J. Zhang, X. Niu, M. S. Li, J. J. Dou","doi":"10.1109/IFWS.2017.8246018","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8246018","url":null,"abstract":"Two novel SiC and GaN Ultraviolet avalanche drift detector (ADD) concepts have been investigated in this manuscript. One is a combination of a APD collecting and multi drift ring structure (MDR-ADD), the other is a detector structure with an APD collecting and a field plate drift configuration (FPD-ADD). The feasibility of the device operation is verified by the TCAD simulation. The APD can be operated in either Geiger mode or linear mode. In the former case, the detector is appropriate for a single photon avalanche detector with the large collection area. In the latter case, the device is well suited to be a low noise scintillation detector with more flexibility. Those novel structures will remain the high avalanche gain with small high electronic field while keep big light absorption area. This could help enlarge the tolerance to the SiC or GaN wafer quality, which is a key restriction to the wide bandgap semiconductor Solid-State Ultraviolet Devices. Those novel ADD concepts are supposed to have better performances in detecting ultraviolet light with low dark current, better noise suppression and high gain.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121195083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of the GaN based LEDs grown with highest throughput MOCVD platform — AMEC Prismo A7TM 在最高通量MOCVD平台上生长GaN基led的研究- AMEC Prismo A7TM

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245921

Jason Hoo, Yao Chen, Hongwei Li, Lion Wang, Yingbin Liu, Vincent Wang, Shiping Guo, Zhiyou Du

{"title":"Study of the GaN based LEDs grown with highest throughput MOCVD platform — AMEC Prismo A7TM","authors":"Jason Hoo, Yao Chen, Hongwei Li, Lion Wang, Yingbin Liu, Vincent Wang, Shiping Guo, Zhiyou Du","doi":"10.1109/IFWS.2017.8245921","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245921","url":null,"abstract":"There has been continuous effort to reduce the cost of III-nitride devices for market penetration of solid state lighting as well as the next generation of power device applications. Using high throughput MOCVD platform is one of the critical drivers to reduce the cost of ownership (CoO) of various light emitting diodes (LED) products. GaN based LEDs grown on 4” patterned sapphire substrates (PSSs) is the primary method for LED manufacturers to further lower CoO. Here we report LED growth on 4” PSSs with the highest throughput MOCVD platform, AMEC Prismo A7TM High quality GaN based single layer materials and LEDs have been grown on both normal 4” PSSs and PSSs with AlN buffer prepared by physical vapor deposition (PVD). Excellent thickness uniformity of less than 1.5% and wavelength uniformity of less than 1.5 nm (1σ with 2 mm edge exclusion) have been achieved for green and blue LEDs on 4” PSSs and PSSs with PVD AlN. In addition, initial results for LEDs growth on 6” PSSs are also reported in this paper.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116152219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of optical power calculation on LED thermal resistance test 光功率计算对LED热阻测试的影响

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245968

Yang Xin, Guo Wei-ling, Lin Song-yu, Wang Jia-lu, Sun Jie

{"title":"Influence of optical power calculation on LED thermal resistance test","authors":"Yang Xin, Guo Wei-ling, Lin Song-yu, Wang Jia-lu, Sun Jie","doi":"10.1109/IFWS.2017.8245968","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245968","url":null,"abstract":"Thermal resistance is an important parameter to measure the performance of LED. In the LED thermal resistance test, the electrical energy not only into heat energy, there are 20% or more energy into light energy. At present, most of the thermal resistance testers are not specifically designed for testing LED, and the standard for calculating the optical power is not uniform. In this paper, the optical power and thermal resistance of different packages 1W dress chip LED, the flip and dress chip structure LED with the same package and output power were investigated under different temperatures and currents by the electrical test method. Results show that the LED's different dissipation capability due to different package, resulting in the optical power of different. Flip chip LED optical power with the same package conditions and output power was significantly higher than that of formal structure. Under the same environmental temperature and output power, the thermal resistance Rth of the calculated optical power is not equivalent to the thermal resistance Rth' for calculating the optical power, Rth can not reflect the true thermal resistance of LED, Therefore, the optical power should be calculated in LED thermal resistance testing.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116232925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of bright light therapy for depression 强光疗法治疗抑郁症的效果

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245986

Y. Zhuang, K. Xie, Yandan Lin

{"title":"Effect of bright light therapy for depression","authors":"Y. Zhuang, K. Xie, Yandan Lin","doi":"10.1109/IFWS.2017.8245986","DOIUrl":"https://doi.org/10.1109/IFWS.2017.8245986","url":null,"abstract":"Depression is a common mental disease, which affects the quality of life. It can be divided into seasonal affective disorder and non-seasonal depression. It has been proved that light therapy has effective therapeutic effect on seasonal affective disorder, while the effect of light therapy on nonseasonal depression need further verification. In this paper, we studied on the effect of bright light therapy on non-seasonal depression. The condition of bright light therapies were: evening treatment conducted from 18:00 to 19:30 and morning treatment conducted from 8:00 to 9:30. The conclusions were: bright light therapy conducted in evening and morning could lift spirits, lead to the decline of heart rate and blood pressure. Also, for people with non-seasonal depression, evening bright light therapy was more effective than in the morning (p=0.004<0.05). Treatment for controlled trial got similar effect of improvement, yet showed no significant difference between evening and morning treatment (p>0.05). This paper verified the effect of improvement of bright light therapy for people with and without non-seasonal depression. Furthermore, we found an optimum condition of bright light therapy for non-seasonal depression treatment, conducted from 18:00 to 19:30 with its CCT of 4400K.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125504586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Heat dissipation analysis of high power LED package 大功率LED封装散热分析

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246007

J. Lu

引用次数: 1

650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab 650 V无色散增强模式GaN-on-Si HEMTs在200 mm CMOS Fab中加工

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8246002

J. Kim, D. Lee, Y. S. Kim, J. Son, W. Luo, D. Marcon, S. Decoutere

引用次数: 2

5G Internet of radio light services for supermarkets 面向超市的5G互联网无线灯光服务

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI: 10.1109/IFWS.2017.8245977

J. Cosmas, Ben Meunier, Kareem Ali, Nawar Jawad, Mukhald A. Salih, Hongying Meng, Jian Song, Jintao Wang, Min Tong, Xiaohong Cao, Xiao Li, Xun Zhang, Chuanxi Huang, Yue Zhang, M. Ran, E. Ran, E. Salomon, Yoav Avinoam, Z. Hadad, Baruch Globen, D. Négru, Mathias Lacaud, M. Kourtis, H. Koumaras, C. Sakkas, Li-Ke Huang, R. Zetik, Krzysztof Cabaj, W. Mazurczyk, A. Kapovits

引用次数: 20