Study of the GaN based LEDs grown with highest throughput MOCVD platform — AMEC Prismo A7TM

Abstract

There has been continuous effort to reduce the cost of III-nitride devices for market penetration of solid state lighting as well as the next generation of power device applications. Using high throughput MOCVD platform is one of the critical drivers to reduce the cost of ownership (CoO) of various light emitting diodes (LED) products. GaN based LEDs grown on 4” patterned sapphire substrates (PSSs) is the primary method for LED manufacturers to further lower CoO. Here we report LED growth on 4” PSSs with the highest throughput MOCVD platform, AMEC Prismo A7TM High quality GaN based single layer materials and LEDs have been grown on both normal 4” PSSs and PSSs with AlN buffer prepared by physical vapor deposition (PVD). Excellent thickness uniformity of less than 1.5% and wavelength uniformity of less than 1.5 nm (1σ with 2 mm edge exclusion) have been achieved for green and blue LEDs on 4” PSSs and PSSs with PVD AlN. In addition, initial results for LEDs growth on 6” PSSs are also reported in this paper.