650 V无色散增强模式GaN-on-Si HEMTs在200 mm CMOS Fab中加工

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI:10.1109/IFWS.2017.8246002

J. Kim, D. Lee, Y. S. Kim, J. Son, W. Luo, D. Marcon, S. Decoutere

{"title":"650 V无色散增强模式GaN-on-Si HEMTs在200 mm CMOS Fab中加工","authors":"J. Kim, D. Lee, Y. S. Kim, J. Son, W. Luo, D. Marcon, S. Decoutere","doi":"10.1109/IFWS.2017.8246002","DOIUrl":null,"url":null,"abstract":"650 V dispersion-free enhancement-mode GaN-on-Si p-GaN HEMTs are demonstrated in a 200 mm CMOS-compatible process, for the first time. The threshold voltage of 36 mm-width power devices is 2.1 V, the output current is 8 A, and the on-resistance is 13 Ω-mm. The manufacturing challenges when maturing the technology from the research and development phase to a production environment are discussed.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab\",\"authors\":\"J. Kim, D. Lee, Y. S. Kim, J. Son, W. Luo, D. Marcon, S. Decoutere\",\"doi\":\"10.1109/IFWS.2017.8246002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"650 V dispersion-free enhancement-mode GaN-on-Si p-GaN HEMTs are demonstrated in a 200 mm CMOS-compatible process, for the first time. The threshold voltage of 36 mm-width power devices is 2.1 V, the output current is 8 A, and the on-resistance is 13 Ω-mm. The manufacturing challenges when maturing the technology from the research and development phase to a production environment are discussed.\",\"PeriodicalId\":131675,\"journal\":{\"name\":\"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFWS.2017.8246002\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFWS.2017.8246002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

首次在200 mm cmos兼容工艺中展示了650 V无色散增强模式GaN-on-Si p-GaN hemt。36mm宽功率器件的阈值电压为2.1 V，输出电流为8a，导通电阻为13 Ω-mm。讨论了该技术从研发阶段成熟到生产环境所面临的制造挑战。

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650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab

650 V dispersion-free enhancement-mode GaN-on-Si p-GaN HEMTs are demonstrated in a 200 mm CMOS-compatible process, for the first time. The threshold voltage of 36 mm-width power devices is 2.1 V, the output current is 8 A, and the on-resistance is 13 Ω-mm. The manufacturing challenges when maturing the technology from the research and development phase to a production environment are discussed.

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2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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