{"title":"基于cf4和基于ch的等离子体栅极凹陷工艺的AlGaN/GaN hemt的直流和射频特性比较","authors":"Bin Hou, Q. Zhu, Lixiang Chen, Xinchuang Zhang, Hengshuang Zhang, Meng Zhang, Minhan Mi, Jiejie Zhu, Ling Yang, Xiaowei Zhou, Xiao-hua Ma, Y. Hao","doi":"10.1109/IFWS.2017.8246014","DOIUrl":null,"url":null,"abstract":"CF<inf>4</inf>-based plasma recessed gate (CF<inf>4</inf>-RGD) and Cl<inf>2</inf>-based plasma recessed gate (Cl<inf>2</inf>-RGD) AlGaN/GaN HEMTs were fabricated in this paper. CF<inf>4</inf>-RGD showed higher DC and RF performance with a peak G<inf>m</inf> of 383 mS/mm and f<inf>T</inf>/f<inf>max</inf> of 49/153GHz than Cl<inf>2</inf>-RGD with a peak G<inf>m</inf> of 352 mS/mm and f<inf>T</inf>/f<inf>max</inf> of 45/118GHz. Due to the outstanding and stable characteristics of CF4-RGD, CF4 plasma is a promising candidate for the gate recessing process in fabrication of GaN-based microwave applications.","PeriodicalId":131675,"journal":{"name":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC and RF characteristic comparison of recessed-gate AlGaN/GaN HEMTs with CF4-based and Ch-based plasma gate recessing process\",\"authors\":\"Bin Hou, Q. Zhu, Lixiang Chen, Xinchuang Zhang, Hengshuang Zhang, Meng Zhang, Minhan Mi, Jiejie Zhu, Ling Yang, Xiaowei Zhou, Xiao-hua Ma, Y. Hao\",\"doi\":\"10.1109/IFWS.2017.8246014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CF<inf>4</inf>-based plasma recessed gate (CF<inf>4</inf>-RGD) and Cl<inf>2</inf>-based plasma recessed gate (Cl<inf>2</inf>-RGD) AlGaN/GaN HEMTs were fabricated in this paper. CF<inf>4</inf>-RGD showed higher DC and RF performance with a peak G<inf>m</inf> of 383 mS/mm and f<inf>T</inf>/f<inf>max</inf> of 49/153GHz than Cl<inf>2</inf>-RGD with a peak G<inf>m</inf> of 352 mS/mm and f<inf>T</inf>/f<inf>max</inf> of 45/118GHz. Due to the outstanding and stable characteristics of CF4-RGD, CF4 plasma is a promising candidate for the gate recessing process in fabrication of GaN-based microwave applications.\",\"PeriodicalId\":131675,\"journal\":{\"name\":\"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"2012 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFWS.2017.8246014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFWS.2017.8246014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC and RF characteristic comparison of recessed-gate AlGaN/GaN HEMTs with CF4-based and Ch-based plasma gate recessing process
CF4-based plasma recessed gate (CF4-RGD) and Cl2-based plasma recessed gate (Cl2-RGD) AlGaN/GaN HEMTs were fabricated in this paper. CF4-RGD showed higher DC and RF performance with a peak Gm of 383 mS/mm and fT/fmax of 49/153GHz than Cl2-RGD with a peak Gm of 352 mS/mm and fT/fmax of 45/118GHz. Due to the outstanding and stable characteristics of CF4-RGD, CF4 plasma is a promising candidate for the gate recessing process in fabrication of GaN-based microwave applications.
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