An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs

Abstract

The elements of Ggsf and Ggdf are introduced into the conventional small-signal model to investigate their temperature characteristics for the first time. The equivalent circuit parameters as well as their temperature behaviors are analyzed and discussed. The imaginary parts of admittance parameters versus frequency under different temperature conditions are deeply studied. Good agreements between modeled and measured scattering parameters have been achieved at each temperature from 0.1GHz to 30GHz.