通过缩小鳍片长度提高AlGaN/GaN鳍片- hemt的跨导峰值和线性度

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2017-11-01 DOI:10.1109/IFWS.2017.8246013

Meng Zhang, Minhan Mi, Bin Hou, Q. Zhu, Lixiang Chen, Jiaxin Zheng, Hengshuang Zhang, Ling Yang, Xiao-hua Ma, Y. Hao

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摘要

本文制备了不同翅片构型的AlGaN/GaN fin - hemt。研究发现，减小鳍片长度可以提高AlGaN/GaN鳍片hemt的跨导峰值和线性度，这可能是由于改变鳍片长度对源电阻进行了调制。AlGaN/GaN fin - hemt的电流截止频率(fT)值和线性度也受益于AlGaN/GaN fin - hemt的跨导峰值和线性度的提高。

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Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length

In this letter, AlGaN/GaN Fin-HEMTs with different fin configurations were fabricated. It is found that the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs are improved by the reduction of the fin length, which can be attributed to the modulation of source resistance by varying the fin length. The value and linearity of current cutoff frequency (fT) of AlGaN/GaN Fin-HEMTs also benefit from the improvement of the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs.

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2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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