Enhancement-mode GaN HEMT power electronic device with low specific on resistance

An enhancement-mode GaN HEMT on silicon substrate was obtained by using p-type GaN Cap. P-type GaN cap was obtained by Mg doping. The activation concentration of the p-GaN cap was 3e17cm⁻³ with a thickness of 60nm. Selective dry etching was used to fabricate the device. Back metal and substrate thinning was used for improving the cooling capacity. A threshold voltage (Vh) of 1.2V was obtained with a maximum forward gate voltage of 7V. An output current (ID) of 12A was obtained at VD and VG were 1V and 6V, respectively. The breakdown voltage of this device was larger than 350V, and the specific on resistance was 0.45 mΩ·cm².