IEEE Magnetics Letters最新文献

{"title":"A Variable Stiffness Methodology to Extend Travel Range of Microelectromagnetic Actuators","authors":"Xian Shi;Changda Yang;Kerong Cai;Xu Wang;Yinghu Liu;Zekai Zhang;Feng Yu;Biao Ji;Guangwei Meng","doi":"10.1109/LMAG.2024.3442710","DOIUrl":"10.1109/LMAG.2024.3442710","url":null,"abstract":"Short controllable travel due to pull-in instability limits some engineering applications of microelectromagnetic systems electromagnetic actuators. This letter presents a variable stiffness methodology to optimize the motion path for the movable armature. The nonlinearly increasing spring force versus the air gap partially offsets the nonlinearity of the electromagnetic force, contributing to a backward shift in the position of the instability point. Also, the relatively low actuator's stiffness compared to conventional linear spring can reduce the driving current. Theoretical calculations prove that this method effectively improves the controllable travel range while reducing the pull-in current and response time.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.1,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study","authors":"Susheel K. Arya;Sonalie Ahirwar;Tanmoy Pramanik","doi":"10.1109/LMAG.2024.3430189","DOIUrl":"10.1109/LMAG.2024.3430189","url":null,"abstract":"External magnetic field perturbation remains a key reliability issue for spin-transfer-torque magnetic random-access memory. Although several prototypes have been demonstrated already, the effects of external fields with varying directions are not well reported. Our macrospin-based study revealed a significant increase in write failures in the presence of small off-axis external magnetic fields. However, incoherent switching pathways, which are also known to impact the switching process, cannot be captured by a macrospin model. Here, we report the micromagnetic model study of the switching process of perpendicular nanomagnets in the presence of magnetic fields of varying magnitudes and directions. The results are consistent with the macrospin model prediction for smaller magnet sizes. For larger magnet sizes, the impact of the off-axis external magnetic field becomes much worse when incoherent magnetization modes dominate the switching process.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.1,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"One Trillion True Random Bits Generated With a Field-Programmable Gate Array Actuated Magnetic Tunnel Junction","authors":"Andre Dubovskiy;Troy Criss;Ahmed Sidi El Valli;Laura Rehm;Andrew D. Kent;Andrew Haas","doi":"10.1109/LMAG.2024.3416091","DOIUrl":"10.1109/LMAG.2024.3416091","url":null,"abstract":"Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses. However, our implementation used high-end and expensive electronics, such as a high-bandwidth arbitrary waveform generator and analog-to-digital converter, and was limited to relatively low data rates. Here, we significantly increase the speed of true random-number generation of our stochastic actuated pMTJs (SMART-pMTJs) using field-programmable gate arrays (FPGAs), demonstrating the generation of over \u0000<inline-formula><tex-math>${text{10}}^{text{12}}$</tex-math></inline-formula>\u0000 bits at rates exceeding 10 Mb/s. The resulting bitstreams pass the NIST Statistical Test Suite for randomness with only one \u0000<sc>xor</small>\u0000 operation. In addition to a hundred-fold reduction in the setup cost and a thousand-fold increase in bitrate, the advancement includes simplifying and optimizing random bit generation with a custom-designed analog daughterboard to interface an FPGA and SMART-pMTJ. The resulting setup further enables FPGA at-speed processing of MTJ data for stochastic modeling and cryptography.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-4"},"PeriodicalIF":1.1,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10561576","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Multiplexer-Based High-Capacity Spintronic Synapse","authors":"Mahan Rezaei;Ermia Elahi;Arefe Amirany;Mohammad Hossein Moaiyeri","doi":"10.1109/LMAG.2024.3416092","DOIUrl":"10.1109/LMAG.2024.3416092","url":null,"abstract":"In recent years, there have been significant advancements in the manufacturing of emerging technologies, especially in the areas of in-memory computing and neural networks, which are currently some of the most actively researched topics. With the increasing need to process complex tasks, the development of intelligent processors has become more crucial than ever. This letter advances a high-capacity spintronic synapse using magnetic tunnel junctions (MTJs) and carbon nanotube field-effect transistors (CNTFETs) to implement associative memory. The choice of MTJ devices is due to their remarkable features, including reliable reconfiguration and nonvolatility. Moreover, CNTFETs have overcome traditional complementary metal–oxide semiconductor limitations, such as the short-channel effect and suboptimal hole mobility. The design seeks to improve accuracy and memory capacity by increasing the number of weights. Simulation results indicate that the design offers a 19%–73% higher number of weights and a lower error rate than the state-of-the-art counterparts.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.1,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic and Microstructural Characterization of Carburized 25Cr35NiNb Alloy","authors":"Shukai Chen;Minghao Zhang;Ke Huang;Genghao Jiao;Yihua Kang;Bo Feng","doi":"10.1109/LMAG.2024.3376152","DOIUrl":"10.1109/LMAG.2024.3376152","url":null,"abstract":"During the service of an HP tube, carbon diffuses into the tube wall, forming a carburization layer and reducing the mechanical strength. To quantitatively measure the carburization layer thickness, its magnetic properties should be accurately characterized. Magnetic properties, including saturation magnetization and magnetic permeability, of chromium-depleted HP alloy have been characterized by a vibration sample magnetometer and the eddy current method. The microstructural observations were made using optical microscopy and scanning electron microscopy. The change of the magnetic properties with chromium content has been quantitatively obtained. The results show that the saturated mass magnetization and magnetic permeability have abrupt increases when chromium content is less than 14.6% and 11.8%, respectively. The obtained properties were further used to quantitatively evaluate the carburization layer thickness in a slice of ex-serviced tube. The estimation error was less than 0.33 mm, indicating the characterized magnetic properties are effective for the carburization layer measurement.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.2,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140169211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance","authors":"Hao Zhang;Di Wang;Long Liu;Yu Liu;Huai Lin;Yifan Zhang;Changqing Xie","doi":"10.1109/LMAG.2024.3396750","DOIUrl":"10.1109/LMAG.2024.3396750","url":null,"abstract":"The read reliability of spin-transfer torque magnetic random-access memory (STT-MRAM) is greatly hindered by a low sensing margin as a result of a small tunneling magnetoresistance ratio. Although the new generation of perpendicular anisotropy spin-orbit torque (SOT)-MRAM offers faster access speed and a longer lifetime than STT-MRAM, its read performance has not improved or even deteriorated because of the additional resistance of the SOT channel in the read path. In this letter, we propose two novel cell structures of SOT-MRAM that consist of one/two transistors, two diodes, and two magnetic tunnel junctions (1T2D2MTJ/2T2D2MTJ) on a shared U-shaped antiferromagnet layer, enabling a self-referencing scheme. Thanks to the bent current channel, the opposite direction of the SOT current below the free layers can one-step switch different data states in compatibility with the existing fabrication process of SOT-MRAM. Combined with the 28 nm tech node and Verilog-A MTJ compact model, the simulation results show that our MRAM cell significantly improves the sensing margin and bit error rate over the conventional two transistors and one MTJ (2T1M) cell, which is expected to become a high read performance solution.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.2,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140842453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Testing of a Compact, Portable Single-Pulse Transcranial Magnetic Stimulation Device","authors":"Wesley Lawson","doi":"10.1109/LMAG.2024.3371370","DOIUrl":"10.1109/LMAG.2024.3371370","url":null,"abstract":"We describe the design and preliminary testing of a portable single-pulse transcranial magnetic stimulation (sTMS) device for the possible treatment of migraine headaches. The design requirements are presented, and tradeoffs/options for some of the key components are analyzed. Details of the design are given, and performance results of the initial prototype are compared with the theoretical predictions, demonstrating the viability of the design.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.2,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140011487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation-Immune Spintronic Binary Synapse and Neuron for Process-in-Memory Architecture","authors":"Milad Tanavardi Nasab;Abdolah Amirany;Mohammad Hossein Moaiyeri;Kian Jafari","doi":"10.1109/LMAG.2024.3356815","DOIUrl":"10.1109/LMAG.2024.3356815","url":null,"abstract":"This letter proposes a single event upset (SEU)-hardened task-scheduling logic-in-memory \u0000<sc>xnor/xor</small>\u0000 neuron and synapse circuit. Using a C-element and a magnetic tunnel junction enhances immunity against SEU injection. Also, using logic-in-memory architecture eliminates the need to access external memory and decreases power and delay. Furthermore, using a carbon nanotube field-effect transistor leads to lower leakage and static current caused by higher gate control in these transistors. Compared to the state-of-the-art counterparts, the developed design offers at least 31%, 17%, and 3% improvement in power, power delay product, and power delay area product, respectively.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.2,"publicationDate":"2024-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Antiferromagnetism in Two-Dimensional, 1T-Phase Iridium Oxide","authors":"Charlie Jindrich;Qi Shao;Antonio Ruotolo","doi":"10.1109/LMAG.2024.3350438","DOIUrl":"https://doi.org/10.1109/LMAG.2024.3350438","url":null,"abstract":"Theoretical studies show that metastable phases of nonmagnetic oxides could exhibit magnetic order when synthesized in two-dimensional (2-D) atomic crystals. In this letter, we report experimental evidence of a nontrivial antiferromagnetic behavior in a 2-D, metastable phase of iridium oxide in which iridium forms a triangular lattice. We compare the magnetic behavior of the crystals in the morphology of 2-D nanosheets with that of the same crystals in the morphology of nanoparticles. At low temperatures, the magnetic moment of nanosheets exceeds that of the nanoparticles while coercivity and remanence collapse, suggesting a transition to an antiferromagnetic phase. Morphology at the nanoscale seems to play a significant role in the magnetic behavior of oxide semiconductors.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-4"},"PeriodicalIF":1.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139694981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic Field-Induced Phase Transition and Weak Ferromagnetism in Nonsuperconducting Optimally Doped PrBCO Cuprate","authors":"Mahieddine Lahoubi;Shengli Pu;Weinan Liu;Zhe Yang","doi":"10.1109/LMAG.2024.3350428","DOIUrl":"10.1109/LMAG.2024.3350428","url":null,"abstract":"In this letter, we report anomalous magnetic properties in high dc magnetic fields \u0000<italic>H</i>\u0000 up to 11 and 16 T from 1.35 up to 20 K on PrBa\u0000₂\u0000Cu\u0000₃\u0000O\u0000_6.95\u0000 (PrBCO\u0000_6.95\u0000) cuprate ceramic. Significant magnetic-field effects are revealed in the derivative of the magnetization \u0000<italic>M</i>\u0000(\u0000<italic>T</i>\u0000) versus \u0000<italic>T</i>\u0000 using two sets of values of \u0000<italic>H</i>\u0000 selected in the range of 2.5–9.5 T. Anomalies are observed at the low-critical point \u0000<italic>T</i>\u0000_cr\u0000 = 4–5 K, in the region of the spin reorientation phase transition temperature \u0000<italic>T</i>\u0000₂\u0000 = 10.5 K, and around the Néel temperature of the antiferromagnetic ordering of the Pr\u0000³⁺\u0000 sublattice \u0000<italic>T</i>\u0000_N\u0000 = 14 K. Using Arrott plot analysis, we identified weak field-induced phase transitions at two critical fields, \u0000<italic>H</i>\u0000_cr1\u0000(\u0000<italic>T</i>\u0000) ∼ 3.3 T and \u0000<italic>H</i>\u0000_cr2\u0000(\u0000<italic>T</i>\u0000) ∼ 7.5 T, whose associated transition lines exhibit an almost temperature-independent behavior in the range 1.35 K-\u0000<italic>T</i>\u0000₂\u0000, and seem to vanish in the vicinity of \u0000<italic>T</i>\u0000_N\u0000. When \u0000<italic>T</i>\u0000 decreases from 20 K, an increase occurs in the derivative of the magnetization \u0000<italic>M</i>\u0000(\u0000<italic>H</i>\u0000) versus \u0000<italic>H</i>\u0000 for 0.5 T < \u0000<italic>H</i>\u0000 < 1 T, as well as in the differential susceptibility \u0000<italic>χ</i>\u0000_d\u0000(\u0000<italic>T</i>\u0000) versus \u0000<italic>T</i>\u0000 where a shape change occurs when crossing \u0000<italic>T</i>\u0000_cr\u0000. The spontaneous magnetization \u0000<italic>M</i>\u0000_S\u0000(\u0000<italic>T</i>\u0000), which was deduced by extrapolation to zero-field from the field-linear regime up to 2 T, shows an inverse variation with \u0000<italic>T</i>\u0000 and a shape change when crossing \u0000<italic>T</i>\u0000_N\u0000 and \u0000<italic>T</i>\u0000₂\u0000. These features, which are taken as evidence for an additional weak ferromagnetic-like component that survives above \u0000<italic>T</i>\u0000_N\u0000, result from the significant role of the Pr-Cu(2) magnetic coupling.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"15 ","pages":"1-5"},"PeriodicalIF":1.2,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}