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IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3360169

引用次数: 0

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IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3379164

引用次数: 0

Numerical Study on the Magnetization Characteristics of Chainlike Magnetic Nanoparticles 链状磁性纳米颗粒磁化特性的数值研究

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-12-23 DOI: 10.1109/LMAG.2022.3231819

Haochen Zhang;Yi Sun;Zhongzhou Du;Teruyoshi Sasayama;Takashi Yoshida

引用次数: 0

Integration of Novel High-Frequency Transformer With Silicon-Carbide Schottky Diodes 新型高频变压器与碳化硅肖特基二极管的集成

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-12-14 DOI: 10.1109/LMAG.2022.3229230

Weichong Yao;Junwei Lu;Andrew Seagar;Feifei Bai;Foad Taghizadeh

引用次数: 0

Effect of Gas Composition During Pt Sputtering on Structural and Magnetic Properties of CoFeB Thin Films Pt溅射过程中气体成分对CoFeB薄膜结构和磁性能的影响

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-12-13 DOI: 10.1109/LMAG.2022.3225742

Hans T. Nembach;Justin M. Shaw;Chloe S. Taylor;Daniel B. Gopman

{"title":"Effect of Gas Composition During Pt Sputtering on Structural and Magnetic Properties of CoFeB Thin Films","authors":"Hans T. Nembach;Justin M. Shaw;Chloe S. Taylor;Daniel B. Gopman","doi":"10.1109/LMAG.2022.3225742","DOIUrl":"10.1109/LMAG.2022.3225742","url":null,"abstract":"Ultrathin Ta/CoFeB/Pt trilayer structures are relevant to a wide range of spintronic applications, from magnetic tunnel junctions to skyrmionics devices. Controlling the perpendicular magnetic anisotropy, Gilbert damping, and Dzyaloshinskii–Moriya interaction (DMI) in the CoFeB layer is key for these applications. We examine the role of sputter gas composition during the Pt overlayer deposition of a Ta/CoFeB/Pt trilayer in Ar, Kr, and Xe working gas environments during direct current magnetron sputtering. The decreasing density of the Pt layer (from 21 to 15 g/cm\u00003\u0000) was apparent in specular X-ray reflectivity measurements of the trilayer films when increasing the molecular weight of the sputtering gas from Ar to Kr to Xe. Significant effects on the Gilbert damping and the interfacial DMI energy were observed, with increases in the damping from 0.037(1) to 0.042(1) to 0.048(1), and reductions in the interfacial DMI from 0.47(4) mJ/m\u00002\u0000 to 0.45(5) mJ/m\u00002\u0000 to 0.39(4) mJ/m\u00002\u0000. The ability to control the perpendicular magnetization and DMI strength of these materials through judicious interfacial control is a means toward magnetic devices with better stability at smaller lateral dimensions, the key to device scaling for spintronic device arrays.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.2,"publicationDate":"2022-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10161395/pdf/nihms-1880596.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9437969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mean-Field Modeling of Magnetocaloric Effect of Antiferromagnetic Compounds 反铁磁性化合物磁热效应的平均场模型

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-12-05 DOI: 10.1109/LMAG.2022.3226918

B. P. Alho;P. O. Ribeiro;R. S. de Oliveira;V. S. R. de Sousa;E. P. Nóbrega;B. C. Margato;J. M. N. da Silva;P. J. von Ranke

{"title":"Mean-Field Modeling of Magnetocaloric Effect of Antiferromagnetic Compounds","authors":"B. P. Alho;P. O. Ribeiro;R. S. de Oliveira;V. S. R. de Sousa;E. P. Nóbrega;B. C. Margato;J. M. N. da Silva;P. J. von Ranke","doi":"10.1109/LMAG.2022.3226918","DOIUrl":"https://doi.org/10.1109/LMAG.2022.3226918","url":null,"abstract":"Antiferromagnetic compounds are known in the literature to present the inverse magnetocaloric effect (MCE). This effect is characterized by the negative adiabatic temperature change \u0000<inline-formula><tex-math>$Delta {T}_S$</tex-math></inline-formula>\u0000 of an antiferromagnetic material when submitted to an applied magnetic field. In an isothermal process, a positive entropy change \u0000<inline-formula><tex-math>$Delta {S}_T$</tex-math></inline-formula>\u0000 is also expected. More recently, the anisotropic character of antiferromagnetic compounds, due to spin-flop and spin-flip transitions, has been pointed out, highlighting the applicability of the antiferromagnetic compounds in a rotary magnetocaloric device. In this work, we systematically investigated a mean-field model that describes the antiferromagnetic behavior of materials in a multisublattice approach. Our model includes the nearest and next-nearest neighbor exchange interaction, the Zeeman effect, and uniaxial anisotropy energy. We investigated the effect of anisotropy on the spin-flop and spin-flip transitions on the usual and anisotropic MCE. We also demonstrated and verified an area rule for \u0000<inline-formula><tex-math>$ - {rm{Delta }}{S}_T$</tex-math></inline-formula>\u0000 versus \u0000<italic>T\u0000 curves that can be used on compounds where the saturation magnetization is magnetic field dependent.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.2,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67741217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Influence of Dzyaloshinskii–Moriya and Dipole–Dipole Interactions on Spontaneous Magnetization Reversal Time of Finite-Length Co Chains on Pt(664) Surfaces Dzyaloshinskii–Moriya和偶极-偶极相互作用对Pt（664）表面有限长Co链自发磁化反转时间的影响

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-12-05 DOI: 10.1109/LMAG.2022.3226656

Sergey V. Kolesnikov;Ekaterina S. Sapronova

引用次数: 0

Settling Time of Current-Tunable Probabilistic Bit's Distribution 电流可调概率比特分布的建立时间

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-12-02 DOI: 10.1109/LMAG.2022.3226031

Brooke C. McGoldrick;Jonathan Z. Sun

引用次数: 1

Memory and Communication-in-Logic Using Vortex and Precessional Oscillations in a Magnetic Tunnel Junction 利用磁隧道结中的涡流和预专业振荡实现逻辑中的记忆和通信

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-11-24 DOI: 10.1109/LMAG.2022.3224676

Sonal Shreya;Milad Zamani;Yaseer Rezaeiyan;Hamdam Ghanatian;Tim Böhnert;Alex S. Jenkins;Ricardo Ferreira;Hooman Farkhani;Farshad Moradi

{"title":"Memory and Communication-in-Logic Using Vortex and Precessional Oscillations in a Magnetic Tunnel Junction","authors":"Sonal Shreya;Milad Zamani;Yaseer Rezaeiyan;Hamdam Ghanatian;Tim Böhnert;Alex S. Jenkins;Ricardo Ferreira;Hooman Farkhani;Farshad Moradi","doi":"10.1109/LMAG.2022.3224676","DOIUrl":"https://doi.org/10.1109/LMAG.2022.3224676","url":null,"abstract":"Wearable and implantable devices (WIDs) come with several separate blocks such as preprocessing units, memory, and data transmission blocks. Hence, in this letter, we present the concept of memory and communication-in-logic (MCL) using a magnetic tunnel junction (MTJ). Here, MTJ is presented as a memory device as well as an oscillator for communication purposes. Vortex-based spin-torque nanooscillators (V-STNO) and precessional STNOs (P-STNO) generate a microwave frequency range (a few hundred MHz to a few GHz) wherein the frequency readout technique using the spin-torque diode is implemented for memory read function. In this work, a 300 nm nanodisk V-STNO generates 296 and 312 MHz frequency for two states of chirality (a characteristic of magnetic vortex), respectively. These different frequencies can be sensed for a bit “0”/ “1” read out through which the data from WIDs can be transmitted in a more energy- and area-efficient way. The output power emission is 3.22 and 1.76 µW for bit “1” and “0,” respectively, for V-STNO, which is three orders of magnitude larger than that of P-STNO. Finally, we demonstrate that V-STNO can transmit data up to 10 m in the air medium, which is much longer than P-STNO (0.24 m).","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.2,"publicationDate":"2022-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67741587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Effect of Buffer and Cap Layer on Thermally Stable Perpendicular Magnetic Anisotropy in Buffer/CoFeB/MgO/Cap Structure 缓冲层和帽层对缓冲层/CoFeB/MgO/帽结构热稳定垂直磁各向异性的影响

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2022-11-09 DOI: 10.1109/LMAG.2022.3221050

Wei Du;Mengli Liu;Fengxuan Han;Hua Su;Bo Liu;Hao Meng;Xiaoli Tang

引用次数: 0