IEEE Magnetics Letters最新文献

Role of Shape Ellipticity on Dipole-Exchange Spin Waves in Ferromagnetic Nanorings 形状椭圆度对铁磁纳米环中偶极交换自旋波的作用

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-09-13 DOI: 10.1109/LMAG.2024.3461575

Yassin Elmeligi;Bushra Hussain;Michael G. Cottam

引用次数: 0

Magnetic and Dielectric Properties of CoFeB Multilayer Thin Films With Oxide Capping Layer 带氧化物封盖层的 CoFeB 多层薄膜的磁性和介电特性

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-09-12 DOI: 10.1109/LMAG.2024.3459813

Yuting Liu;Sylvain Eimer;Jianyuan Zhao;Yiming Chen

引用次数: 0

Effect of Powder Particle Surface Treatment on DC Magnetic Properties of Compacted Iron Cores 粉末颗粒表面处理对压制铁芯直流磁性能的影响

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-08-26 DOI: 10.1109/LMAG.2024.3450334

Martin Tkáč;Peter Kollár;Robert Maciaszek;Samuel Dobák;Ján Füzer;Denisa Olekšáková;Radovan Bureš;Mária Fáberová

引用次数: 0

Exploring the Structural and Magnetic Properties of Cu-Rich CuxMn3−xO4 Spinels for Advanced Magnetic Refrigeration at Liquid Nitrogen Temperatures 探索用于液氮温度下先进磁制冷的富铜 CuxMn3-xO4 Spinels 的结构和磁特性

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-08-15 DOI: 10.1109/LMAG.2024.3443745

Abir Hadded;Igor Veremchuk;Shengqiang Zhou;Denys Makarov;Essebti Dhahri

{"title":"Exploring the Structural and Magnetic Properties of Cu-Rich CuxMn3−xO4 Spinels for Advanced Magnetic Refrigeration at Liquid Nitrogen Temperatures","authors":"Abir Hadded;Igor Veremchuk;Shengqiang Zhou;Denys Makarov;Essebti Dhahri","doi":"10.1109/LMAG.2024.3443745","DOIUrl":"https://doi.org/10.1109/LMAG.2024.3443745","url":null,"abstract":"Cu–Mn oxide spinels reveal notorious magnetocaloric performance at liquid nitrogen temperatures. We applied the soft chemistry sol–gel method to prepare Cu\u0000<italic>x\u0000Mn\u00003−\u0000<italic>x\u0000O\u00004\u0000 samples with nominal Cu content of \u0000<italic>x\u0000 = 1, 1.5, 1.8, and 2. According to powder X-ray diffraction studies, we succeeded to fabricate multiphase samples with a high content of Cu in spinel phases. We provide insights into the structural and magnetic, as well as magnetocaloric, properties of the synthesized samples. We determine that in contrast to samples with \u0000<italic>x\u0000 = 1.0 and 1.5, which are coupled ferromagnetically, the samples with \u0000<italic>x\u0000 = 1.8 and 2.0 reveal ferrimagnetic coupling. The transition temperature is found to decrease only slightly from 78 K (\u0000<italic>x\u0000 = 1) to 75 K (\u0000<italic>x\u0000 = 2). The maximum values of the magnetic entropy change and relative cooling power are determined for each compound and found to be the largest for the sample with \u0000<italic>x\u0000 = 1.0 due to its largest magnetization. Independent of the Cu content, here, the studied samples reveal a relative cooling power of larger than 139 J/kg, which highlights the relevance of these materials for magnetic refrigeration applications, particularly at liquid nitrogen temperatures.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142174007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Variable Stiffness Methodology to Extend Travel Range of Micro Electromagnetic Actuators 扩展微型电磁致动器行程范围的可变刚度方法

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-08-13 DOI: 10.1109/lmag.2024.3442710

Xian Shi, Changda Yang, Kerong Cai, Xu Wang, Yinghu Liu, Zekai Zhang, Feng Yu, Biao Ji, Guangwei Meng

引用次数: 0

Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study 离轴外部磁场扰动对垂直 STT-RAM 单元写入误差斜率的影响：微磁研究

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-07-18 DOI: 10.1109/LMAG.2024.3430189

Susheel K. Arya;Sonalie Ahirwar;Tanmoy Pramanik

引用次数: 0

One Trillion True Random Bits Generated With a Field-Programmable Gate Array Actuated Magnetic Tunnel Junction 利用场可编程门阵列驱动磁隧道结生成一万亿真实随机比特

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-06-18 DOI: 10.1109/LMAG.2024.3416091

Andre Dubovskiy;Troy Criss;Ahmed Sidi El Valli;Laura Rehm;Andrew D. Kent;Andrew Haas

{"title":"One Trillion True Random Bits Generated With a Field-Programmable Gate Array Actuated Magnetic Tunnel Junction","authors":"Andre Dubovskiy;Troy Criss;Ahmed Sidi El Valli;Laura Rehm;Andrew D. Kent;Andrew Haas","doi":"10.1109/LMAG.2024.3416091","DOIUrl":"10.1109/LMAG.2024.3416091","url":null,"abstract":"Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses. However, our implementation used high-end and expensive electronics, such as a high-bandwidth arbitrary waveform generator and analog-to-digital converter, and was limited to relatively low data rates. Here, we significantly increase the speed of true random-number generation of our stochastic actuated pMTJs (SMART-pMTJs) using field-programmable gate arrays (FPGAs), demonstrating the generation of over \u0000<inline-formula><tex-math>${text{10}}^{text{12}}$</tex-math></inline-formula>\u0000 bits at rates exceeding 10 Mb/s. The resulting bitstreams pass the NIST Statistical Test Suite for randomness with only one \u0000<sc>xor\u0000 operation. In addition to a hundred-fold reduction in the setup cost and a thousand-fold increase in bitrate, the advancement includes simplifying and optimizing random bit generation with a custom-designed analog daughterboard to interface an FPGA and SMART-pMTJ. The resulting setup further enables FPGA at-speed processing of MTJ data for stochastic modeling and cryptography.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10561576","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141934040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Multiplexer-Based High-Capacity Spintronic Synapse 基于多路复用器的高容量自旋电子突触

IF 1.1 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-06-18 DOI: 10.1109/LMAG.2024.3416092

Mahan Rezaei;Ermia Elahi;Arefe Amirany;Mohammad Hossein Moaiyeri

引用次数: 0

Magnetic and Microstructural Characterization of Carburized 25Cr35NiNb Alloy 渗碳 HP 合金的磁性和微观结构表征

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-03-18 DOI: 10.1109/LMAG.2024.3376152

Shukai Chen;Minghao Zhang;Ke Huang;Genghao Jiao;Yihua Kang;Bo Feng

引用次数: 0

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance 实现高读取性能的互补磁化开关垂直自旋轨道转矩随机存取存储器单元

IF 1.2 4区物理与天体物理

IEEE Magnetics Letters Pub Date : 2024-03-03 DOI: 10.1109/LMAG.2024.3396750

Hao Zhang;Di Wang;Long Liu;Yu Liu;Huai Lin;Yifan Zhang;Changqing Xie

{"title":"Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance","authors":"Hao Zhang;Di Wang;Long Liu;Yu Liu;Huai Lin;Yifan Zhang;Changqing Xie","doi":"10.1109/LMAG.2024.3396750","DOIUrl":"10.1109/LMAG.2024.3396750","url":null,"abstract":"The read reliability of spin-transfer torque magnetic random-access memory (STT-MRAM) is greatly hindered by a low sensing margin as a result of a small tunneling magnetoresistance ratio. Although the new generation of perpendicular anisotropy spin-orbit torque (SOT)-MRAM offers faster access speed and a longer lifetime than STT-MRAM, its read performance has not improved or even deteriorated because of the additional resistance of the SOT channel in the read path. In this letter, we propose two novel cell structures of SOT-MRAM that consist of one/two transistors, two diodes, and two magnetic tunnel junctions (1T2D2MTJ/2T2D2MTJ) on a shared U-shaped antiferromagnet layer, enabling a self-referencing scheme. Thanks to the bent current channel, the opposite direction of the SOT current below the free layers can one-step switch different data states in compatibility with the existing fabrication process of SOT-MRAM. Combined with the 28 nm tech node and Verilog-A MTJ compact model, the simulation results show that our MRAM cell significantly improves the sensing margin and bit error rate over the conventional two transistors and one MTJ (2T1M) cell, which is expected to become a high read performance solution.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.2,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140842453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0