{"title":"Radiation-Immune Spintronic Binary Synapse and Neuron for Process-in-Memory Architecture","authors":"Milad Tanavardi Nasab;Abdolah Amirany;Mohammad Hossein Moaiyeri;Kian Jafari","doi":"10.1109/LMAG.2024.3356815","DOIUrl":null,"url":null,"abstract":"This letter proposes a single event upset (SEU)-hardened task-scheduling logic-in-memory \n<sc>xnor/xor</small>\n neuron and synapse circuit. Using a C-element and a magnetic tunnel junction enhances immunity against SEU injection. Also, using logic-in-memory architecture eliminates the need to access external memory and decreases power and delay. Furthermore, using a carbon nanotube field-effect transistor leads to lower leakage and static current caused by higher gate control in these transistors. Compared to the state-of-the-art counterparts, the developed design offers at least 31%, 17%, and 3% improvement in power, power delay product, and power delay area product, respectively.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10410898/","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This letter proposes a single event upset (SEU)-hardened task-scheduling logic-in-memory
xnor/xor
neuron and synapse circuit. Using a C-element and a magnetic tunnel junction enhances immunity against SEU injection. Also, using logic-in-memory architecture eliminates the need to access external memory and decreases power and delay. Furthermore, using a carbon nanotube field-effect transistor leads to lower leakage and static current caused by higher gate control in these transistors. Compared to the state-of-the-art counterparts, the developed design offers at least 31%, 17%, and 3% improvement in power, power delay product, and power delay area product, respectively.
这封信提出了一种单事件干扰(SEU)加固的任务调度逻辑内存 xnor/xor 神经元和突触电路。使用 C 元素和磁隧道结增强了对 SEU 注入的免疫力。同时,使用内存逻辑架构无需访问外部存储器,从而降低了功耗和延迟。此外,使用碳纳米管场效应晶体管可降低漏电流和静态电流,因为这些晶体管的栅极控制能力更强。与最先进的同类产品相比,所开发的设计在功率、功率延迟积和功率延迟面积积方面分别至少提高了 31%、17% 和 3%。
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.