IEEE Solid-State Circuits Letters最新文献

A Low-Reference-Spur and Low-Jitter D-Band PLL With Complementary Power-Gating Injection-Locked Frequency-Multiplier-Based Phase Detector 基于互补功率门控注入锁频乘法器的低参考杂散低抖动d波段锁相环鉴相器

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-28 DOI: 10.1109/LSSC.2025.3564893

Jaeho Kim;Jooeun Bang;Seohee Jung;Myeongho Han;Jaehyouk Choi

引用次数: 0

A 56-Gb/s DAC/ADC-Based Multicarrier Transceiver With TX Polar DSP and RX MIMO-DSP for >40-dB Loss Channel 一种56gb /s基于DAC/ adc的多载波收发器，具有TX极性DSP和RX MIMO-DSP，适用于>40-dB损耗通道

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-21 DOI: 10.1109/LSSC.2025.3562615

Srujan Kumar Kaile;Julian Camilo Gomez Diaz;Yuanming Zhu;Il-Min Yi;Tong Liu;Sebastian Hoyos;Samuel Palermo

引用次数: 0

Convolutional Window-Inspired Similarity-Aware Computation-in-Memory for Energy Saving 基于卷积窗口的内存相似性感知计算节能技术

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-15 DOI: 10.1109/LSSC.2025.3560676

Yong-Jun Jo;Chufeng Yang;Yuanjin Zheng;Tony Tae-Hyoung Kim

引用次数: 0

A MOS-Based Temperature Sensor With Energy-Efficient Techniques 一种基于mos的高能效温度传感器

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-11 DOI: 10.1109/LSSC.2025.3559900

Jooeun Kim;Jeongmyeong Kim;Minkyu Yang;Kyounghun Kang;Wanyeong Jung

{"title":"A MOS-Based Temperature Sensor With Energy-Efficient Techniques","authors":"Jooeun Kim;Jeongmyeong Kim;Minkyu Yang;Kyounghun Kang;Wanyeong Jung","doi":"10.1109/LSSC.2025.3559900","DOIUrl":"https://doi.org/10.1109/LSSC.2025.3559900","url":null,"abstract":"This letter presents an energy-efficient MOS-based temperature sensor, enhanced through transducer and readout circuit integrated design, LSB-first SAR, and energy-efficient comparator. The transducer and readout circuit integrated design reduces noise by combining two blocks into one. With temperature-dependent offset voltage, the comparator integrates with the LSB-first SAR and is optimized for energy efficiency. The LSB-first SAR reduces the number of cycles and energy consumption. In addition, an asynchronous clock controls the circuit, eliminating the need for a timing reference and adjusting speed to temperature to increase measurement robustness. The temperature sensor was fabricated with a 65 nm CMOS process, and the sensor has −60 to <inline-formula> <tex-math>$145~^{circ }$ </tex-math></inline-formula>C measurement range. After two-point calibration with a second-order polynomial, errors are −1.93/<inline-formula> <tex-math>${+} 1.44~^{circ }$ </tex-math></inline-formula>C over the entire range and −0.96/<inline-formula> <tex-math>${+} 0.94~^{circ }$ </tex-math></inline-formula>C from −43 to <inline-formula> <tex-math>$137~^{circ }$ </tex-math></inline-formula>C. At room temperature, the sensor achieves 71.8 mK resolution and 41.9 pJ per conversion, resulting in the best resolution figure-of-merit of 216 fJ<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>K2 among MOS-based sensors.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"109-112"},"PeriodicalIF":2.2,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143870918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Segmented Precision Configurable Computing-in-Memory Macro With Dual-Edge Time-Domain Structure 具有双边缘时域结构的分段精确可配置内存宏

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-08 DOI: 10.1109/LSSC.2025.3558928

Chang Xue;Youming Yang;Siyuan He;Gang Du;Yuan Wang;Yandong He

引用次数: 0

A Low-Power Fully Dynamic Latched Comparator Using Flexible Oxide TFT Technology 采用柔性氧化物TFT技术的低功耗全动态锁存比较器

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-04 DOI: 10.1109/LSSC.2025.3557862

Vaishali Choudhary;Pydi Ganga Bahubalindruni

引用次数: 0

Analysis of Power Consumption and Propagation Delay in Voltage Level Shifters 电压电平转换器的功耗和传播延迟分析

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-03 DOI: 10.1109/LSSC.2025.3557524

Mehdi Saberi;Alexandre Schmid

引用次数: 0

GaN HEMT-Based Resonators Using Parasitic Effects and Its Application to A Ka-band Coupled-Resonator SPDT Switch 利用寄生效应的GaN hemt谐振器及其在ka波段耦合谐振器SPDT开关中的应用

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-04-03 DOI: 10.1109/LSSC.2025.3557531

Guangxu Shen;Haitao Ma;Chenyang Zhang;Dingyuan Zeng Member;Haoshen Zhu;Wenquan Che

{"title":"GaN HEMT-Based Resonators Using Parasitic Effects and Its Application to A Ka-band Coupled-Resonator SPDT Switch","authors":"Guangxu Shen;Haitao Ma;Chenyang Zhang;Dingyuan Zeng Member;Haoshen Zhu;Wenquan Che","doi":"10.1109/LSSC.2025.3557531","DOIUrl":"https://doi.org/10.1109/LSSC.2025.3557531","url":null,"abstract":"A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on which a broadband single-pole double-throw (SPDT) switch is presented with a bandpass response. As for on-chip switches, the ideal transistor is desired to act as a capacitor in its off-state but a resistor in its on-state. In conventional switch designs, the inductive effects of transistors are typically suppressed due to their detrimental impact on impedance matching and isolation. In contrast to this conventional approach, this study proposes a resonator-based design strategy that intentionally exploits and amplifies these inductive characteristics to construct two distinct GaN HEMT-integrated resonators. The first resonator employs the enhanced on-state inductance of a switching transistor combined with an MIM capacitor to form a series resonant network, enabling broadband impedance matching. The second resonator utilizes the large off-state capacitance of a power transistor and a short-circuited transmission line to establish a parallel resonant network. Leveraging the unique properties of these resonators, a broadband switch topology is accordingly proposed and experimentally validated. For demonstration, a SPDT switch is designed and fabricated in a 100 nm GaN-on-Si process. The proposed switch operates from 16 to 33 GHz based on experimental measurements. Two transmission poles are observed in the passband. This result experimentally validates the GaN HEMT-based resonator design.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"105-108"},"PeriodicalIF":2.2,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143850828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Secure FMCW LiDAR Ranging With an Electro-Optical Synthesizer at 5000 Measurements/s 利用每秒 5000 次测量的电光合成器实现安全的 FMCW 激光雷达测距

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-03-28 DOI: 10.1109/LSSC.2025.3555948

Marziyeh Rezaei;Liban Hussein;Alana Dee;Shucheng Fang;Qixuan Lin;Mo Li;Sajjad Moazeni

{"title":"Secure FMCW LiDAR Ranging With an Electro-Optical Synthesizer at 5000 Measurements/s","authors":"Marziyeh Rezaei;Liban Hussein;Alana Dee;Shucheng Fang;Qixuan Lin;Mo Li;Sajjad Moazeni","doi":"10.1109/LSSC.2025.3555948","DOIUrl":"https://doi.org/10.1109/LSSC.2025.3555948","url":null,"abstract":"Frequency-modulated continuous wave (FMCW) LiDAR offers a significant advantage over FMCW RADAR due to its superior lateral resolution, achieving more than a <inline-formula> <tex-math>$1000times $ </tex-math></inline-formula> improvement. However, laser nonlinearities require the use of electro-optical phase-locked loops (EO PLLs), and conventional EO PLL-based FMCW LiDAR systems are susceptible to spoofing attacks. To address this vulnerability, this letter introduces an electro-optical (EO) synthesizer designed to generate FMCW signals with randomly varying chirp rates per frame. The synthesizer incorporates an on-chip SRAM-based physically unclonable function (PUF) fabricated in 180-nm RF CMOS, which generates a device-specific random key to enhance the security of FMCW LiDAR against spoofing attacks. The synthesizer supports four programmable chirp rates: from 8.5 to 12 GHz/ms with a chirp period of <inline-formula> <tex-math>$600~mu $ </tex-math></inline-formula>s, and from 12.75 to 18 GHz/ms with a chirp period of <inline-formula> <tex-math>$200~mu $ </tex-math></inline-formula>s, resulting in a <inline-formula> <tex-math>$5times $ </tex-math></inline-formula> increase in generated cloud points compared to existing long-range EO PLL-based FMCW LiDAR systems.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"93-96"},"PeriodicalIF":2.2,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 24 V-to-1 V Low Input Current Ripple SC Hybrid Converter With Conducted EMI Noise Precompensation Filter and Current-Modulated Gate-Driver for Automobile Application 带传导EMI噪声预补偿滤波器和电流调制栅极驱动器的24v - 1v低输入纹波SC混合变换器

IF 2.2

IEEE Solid-State Circuits Letters Pub Date : 2025-03-26 DOI: 10.1109/LSSC.2025.3554811

Yu-Tse Shih;Li-Jen Huang;Xiao-Quan Wu;Wei-Chieh Hung;Tz-Han Hsu;Kuo-Lin Zheng;Ke-Horng Chen;Ying-Hsi Lin;Shian-Ru Lin;Tsung-Yen Tsai

引用次数: 0