{"title":"A 6.4-Gb/s/pin nand Flash Memory Multichip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems","authors":"Shinichi Ikeda;Akira Iwata;Goichi Otomo;Tomoaki Suzuki;Hiroaki Iijima;Mikio Shiraishi;Shinya Kawakami;Masatomo Eimitsu;Yoshiki Matsuoka;Kiyohito Sato;Shigehiro Tsuchiya;Yoshinori Shigeta;Takuma Aoyama","doi":"10.1109/LSSC.2024.3377263","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3377263","url":null,"abstract":"This letter describes a NAND flash memory multichip package (NAND MCP) incorporating a developed LSI interface (IF) Chip (Bridge Chip) in which the IF to and from the solid-state drive (SSD) controller has twice the speed as that of the IF to and from the NAND dies even with multiple packages on each printed circuit board (PCB) channel. This NAND MCP allows to reduce the number of NAND IF channels on the PCB while retaining the total bandwidth of the SSD and increasing the capacity. The Bridge Chip employs a 2:1 frequency multiplying function to bridge the speed gap, a fast-lock phase-locked loop (PLL) with an extended pull-in range and 16-cycle lock time to enhance the IF performance with its input-jitter filtering effect, and equalizers to compensate for intersymbol interference and reflected noise in up to a 4-drop configuration. The Bridge Chip implemented in a 12-nm CMOS process is demonstrated at 6.4 Gb/s/pin with 2.85-pJ/b I/O energy efficiency in a read operation. The NAND MCP incorporating the Bridge Chip and eight 1-Tb NAND dies achieves data transmission to and from field-programmable gate array (FPGA) at twice the speed of the NAND IF in a 2-drop configuration.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"115-118"},"PeriodicalIF":2.7,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140348399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Multichannel Injection-Locked OOK Transmitter With Current Mode Edge-Combining Power Amplifier","authors":"Sheng-Kai Chang;Zhi-Wei Lin;Kuang-Wei Cheng","doi":"10.1109/LSSC.2024.3375329","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3375329","url":null,"abstract":"This letter introduces an ultralow-power ON–OFF keying (OOK) wireless transmitter incorporating innovative multiphase injection locking and frequency multiplication techniques. The transmitter leverages a current mode class-D edge-combining power amplifier, ensuring high-energy efficiency in frequency multiplication to generate the carrier frequency. With a primary focus on facilitating multichannel support for Internet of Things (IoT) applications, the prototype incorporates a low-frequency phase-rotation-based frequency synthesizer. To mitigate the quantization noise in \u0000<inline-formula> <tex-math>$Delta Sigma $ </tex-math></inline-formula>\u0000 modulator of the synthesizer, the design combines an N-path filter and injection-locked ring oscillators to effectively filter out the shaped far-out phase noise. The prototype, fabricated in TSMC 90-nm CMOS, achieves an output power of −6.9 dBm with a power consumption of \u0000<inline-formula> <tex-math>$890~mu text{W}$ </tex-math></inline-formula>\u0000 at a 0.75-V supply voltage. It supports data rates of up to 40 Mb/s under OOK modulation, resulting in an energy efficiency of 22 pJ/bit and a global efficiency of 23%, showcasing its effectiveness in balancing performance and power consumption.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"111-114"},"PeriodicalIF":2.7,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140310160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A VCO With Robust Implicit Common-Mode Resonance Against Nonideal Decoupling Network","authors":"Dingxin Xu;Zheng Sun;Yuang Xiong;Yuncheng Zhang;Hongye Huang;Zezheng Liu;Ashbir Aviat Fadila;Atsushi Shirane;Kenichi Okada","doi":"10.1109/LSSC.2024.3399228","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3399228","url":null,"abstract":"This letter describes a voltage-controlled oscillator (VCO) that can achieve robust flicker noise suppression when the decoupling network is not ideal. Utilizing a multitap transformer, the implicit common-mode (CM) impedance quality factor (Q factor) degradation from the parasitic resistance of the decoupling network can be avoided. Fabricated in 65-nm CMOS, the proposed VCO realizes a flicker corner (1/f3 corner) from 70 to 230 kHz across the tuning range from 4.24 to 4.80 GHz. The proposed VCO achieves a phase noise (PN) of -127.4 dBc/Hz at 1 MHz offset frequency fofst and a Figure of Merit (FoM) of 193.1 dB. The core area of the VCO is 0.29 mm2.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"171-174"},"PeriodicalIF":2.7,"publicationDate":"2024-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141181903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kateryna Smirnova;Mark van der Heijden;Domine Leenaerts;Ahmet Çağrı Ulusoy
{"title":"Bidirectional 6-Bit Active Phase Shifter in W-Band","authors":"Kateryna Smirnova;Mark van der Heijden;Domine Leenaerts;Ahmet Çağrı Ulusoy","doi":"10.1109/LSSC.2024.3398779","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3398779","url":null,"abstract":"In this letter, a novel W-band switchless bidirectional active phase shifter with 6-bit resolution is proposed. The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active topologies. The circuit exhibits a maximum average gain of –7.4 and –8.2 dB in two directions while maintaining the RMS amplitude and phase error lower than 0.84 dB and 3.4° within 85– 100 GHz, respectively. The phase shifter uses 0.04 mm2 of the IC area and the DC power of 38 mW in each direction from a 2.4-V supply voltage, excluding the phase control circuitry.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"175-178"},"PeriodicalIF":2.7,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141187374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gopikrishnan R. Nair;Pragnya S. Nalla;Gokul Krishnan;Anupreetham;Jonghyun Oh;Ahmed Hassan;Injune Yeo;Kishore Kasichainula;Mingoo Seok;Jae-Sun Seo;Yu Cao
{"title":"3-D In-Sensor Computing for Real-Time DVS Data Compression: 65-nm Hardware-Algorithm Co-Design","authors":"Gopikrishnan R. Nair;Pragnya S. Nalla;Gokul Krishnan;Anupreetham;Jonghyun Oh;Ahmed Hassan;Injune Yeo;Kishore Kasichainula;Mingoo Seok;Jae-Sun Seo;Yu Cao","doi":"10.1109/LSSC.2024.3375110","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3375110","url":null,"abstract":"Traditional IO links are insufficient to transport high volume of image sensor data, under stringent power and latency constraints. To address this, we demonstrate a low latency, low power in-sensor computing architecture to compress the data from a 3D-stacked dynamic vision sensor (DVS). In this design, we adopt a 4-bit autoencoder algorithm and implement it on an AI computing layer with in-memory computing (IMC) to enable real-time compression of DVS data. To support 3-D integration, this architecture is optimized to handle the unique constraints, including footprint to match the size of the sensor array, low latency to manage the continuous data stream, and low-power consumption to avoid thermal issues. Our prototype chip in 65-nm CMOS demonstrates the new concept of 3-D in-sensor computing, achieving < 6 mW power consumption at 1–10 MHz operating frequency, and\u0000<inline-formula> <tex-math>$10times $ </tex-math></inline-formula>\u0000 compression ratio on \u0000<inline-formula> <tex-math>$256times 256$ </tex-math></inline-formula>\u0000 DVS pixels.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"119-122"},"PeriodicalIF":2.7,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140544255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 90 µW at 1 fps and 1.33 mW at 30 fps 120-dB Intrascene Dynamic Range 640 × 480 Stacked Image Sensor for Autonomous Vision Systems","authors":"Pierre-François Rüedi;Riccardo Quaglia;Hans-Rudolf Graf","doi":"10.1109/LSSC.2024.3370797","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3370797","url":null,"abstract":"We present an ultralow-power high dynamic range (DR) image sensor dedicated to autonomous vision systems, produced in a back illuminated 65 nm/40 nm stacked process and based on a time-to-digital pixel with in-pixel A/D conversion and data memory. Key to the low-power consumption is a new in-pixel comparator without dc current consumption. The 120-dB intrascene DR of the sensor, encoded on 10 bits, makes use of a logarithmic data representation. Thanks to the high intrascene DR, no adaptation to the local illumination is necessary. The sensor has a sensitivity of 6.4 V/lux/s, an FPN of 0.6%, and a temporal noise of 11 e−, with a pixel pitch of \u0000<inline-formula> <tex-math>$6.3 , mu text{m}$ </tex-math></inline-formula>\u0000 and a fill factor of 86%.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"106-109"},"PeriodicalIF":2.7,"publicationDate":"2024-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140161094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gichan Yun;Kyeongwon Jeong;Haidam Choi;Seunghyun Nam;Chaerin Oh;Hyunjoo Jenny Lee;Sohmyung Ha;Minkyu Je
{"title":"An Ultrasound Receiver With Bandwidth-Enhanced Current Conveyor and Element-Level Ultrasound Transmitter for Ultrasound Imaging Systems","authors":"Gichan Yun;Kyeongwon Jeong;Haidam Choi;Seunghyun Nam;Chaerin Oh;Hyunjoo Jenny Lee;Sohmyung Ha;Minkyu Je","doi":"10.1109/LSSC.2024.3369605","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3369605","url":null,"abstract":"In this letter, we present an ultrasound (US) imaging system with a low-noise US receiver (RX) and an element-level US transmitter (TX) for a capacitive micromachined ultrasonic transducer (CMUT). The proposed US RX isolates the input parasitic capacitance \u0000<inline-formula> <tex-math>$(C_{P})$ </tex-math></inline-formula>\u0000 from the front-end transimpedance stage by using a bandwidth-enhanced current conveyor. By reducing the effects of the \u0000<inline-formula> <tex-math>$C_{P}$ </tex-math></inline-formula>\u0000, the noise and power efficiency are improved compared to the conventional current readout circuits. Also, a US TX having a class-D output stage is implemented to excite the CMUT with 30-V unipolar pulses. Fabricated in a 180-nm BCD process, the proposed US RX achieves input-referred noise of 2.0 pA/\u0000<inline-formula> <tex-math>$sqrt {textit {Hz}}$ </tex-math></inline-formula>\u0000 at 7.5 MHz and a bandwidth of 18 MHz with 25-pF CMUT capacitance while consuming 3.62 mW.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"98-101"},"PeriodicalIF":2.7,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140104292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amitesh Sridharan;Jyotishman Saikia;Anupreetham;Fan Zhang;Jae-Sun Seo;Deliang Fan
{"title":"PS-IMC: A 2385.7-TOPS/W/b Precision Scalable In-Memory Computing Macro With Bit-Parallel Inputs and Decomposable Weights for DNNs","authors":"Amitesh Sridharan;Jyotishman Saikia;Anupreetham;Fan Zhang;Jae-Sun Seo;Deliang Fan","doi":"10.1109/LSSC.2024.3369058","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3369058","url":null,"abstract":"We present a fully digital multiply and accumulate (MAC) in-memory computing (IMC) macro demonstrating one of the fastest flexible precision integer-based MACs to date. The design boasts a new bit-parallel architecture enabled by a 10T bit-cell capable of four AND operations and a decomposed precision data flow that decreases the number of shift–accumulate operations, bringing down the overall adder hardware cost by \u0000<inline-formula> <tex-math>$1.57times $ </tex-math></inline-formula>\u0000 while maintaining 100% utilization for all supported precision. It also employs a carry save adder tree that saves 21% of adder hardware. The 28-nm prototype chip achieves a speed-up of \u0000<inline-formula> <tex-math>$2.6times $ </tex-math></inline-formula>\u0000, \u0000<inline-formula> <tex-math>$10.8times $ </tex-math></inline-formula>\u0000, \u0000<inline-formula> <tex-math>$2.42times $ </tex-math></inline-formula>\u0000, and \u0000<inline-formula> <tex-math>$3.22times $ </tex-math></inline-formula>\u0000 over prior SoTA in 1bW:1bI, 1bW:4bI, 4bW:4bI, and 8bW:8bI MACs, respectively.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"102-105"},"PeriodicalIF":2.7,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140123545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sustainable Status Monitoring of MOSFETs in a Fully Integrated RF Amplifier by Thermal Voltage Sensing of On-Chip Thermopile","authors":"Jian-Hua Li;Xiaoping Liao","doi":"10.1109/LSSC.2024.3368634","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3368634","url":null,"abstract":"In this letter, a sustainable status monitoring of MOSFETs in a fully integrated two stage RF amplifier by thermal voltage sensing of on-chip thermopile is implemented in 0.18-\u0000<inline-formula> <tex-math>$mu text{m}$ </tex-math></inline-formula>\u0000 CMOS technology. The designed micro-thermopile consists of many thermocouples electrically connected in series by Al and P-type polysilicon, which are carefully arranged around the metal-oxide-semiconductor field-effect transistors (MOSFETs). A noteworthy attribute of variations-aware thermopiles, which exhibits an exceptionally close physical proximity to the MOSFETs, is their nonintrusive nature, indicating that they lack electrical connectivity to transistors. During normal operation of the RF amplifier, the dynamic range of its input power spans from −20 to 0 dBm. Experimental measurements on the MOSFETs employed in the first and second power amplification stages are observed to lie within the range of 0.226 to 0.264 and 0.275 to 0.3 mV at 5.4 GHz, respectively. This result demonstrates the capability of integrated on-chip micro-thermopiles to enable continuous monitoring of the operational status of MOSFETs. In comparison to conventional status monitoring approaches, the advantage of this integrated design lies in its elimination of the requirement for supplementary sensors or devices, thereby presenting a significant economic benefit as a low-cost, sustainable monitoring solution in a fully integrated CMOS RF amplifier.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"94-97"},"PeriodicalIF":2.7,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140063492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"OCCAM: An Error Oblivious CAM","authors":"Yuval Harary;Paz Snapir;Eyal Reshef;Esteban Garzón;Leonid Yavits","doi":"10.1109/LSSC.2024.3362891","DOIUrl":"https://doi.org/10.1109/LSSC.2024.3362891","url":null,"abstract":"Content addressable memories (CAMs) are widely used in many applications in general purpose computer microarchitecture, networking and domain-specific hardware accelerators. In addition to storing and reading data, CAMs enable simultaneous compare of query datawords with the entire memory content. Similar to SRAM and DRAM, CAMs are prone to errors and faults. While error correcting codes (ECCs) are widely used in DRAM and SRAM, they are not directly applicable in CAM: if a dataword that is supposed to match a query altered due to an error, it will falsely mismatch even if it is ECC-encoded. We propose OCCAM, an error oblivious CAM, which combines ECC and approximate search (matching) to allow tolerating a large and dynamically configurable number of errors. We manufactured the OCCAM silicon prototype using 65-nm commercial process and verified its error tolerance capabilities through silicon measurements. OCCAM tolerates 11% error rate (7 bit errors in each 64-bit memory row) with 100% sensitivity and specificity.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"82-85"},"PeriodicalIF":2.7,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10423391","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139941573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}