2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献

Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations 通过自洽能量平衡-细胞蒙特卡罗器件模拟，在Si上表征GaN HEMT的电热特性

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-12-26 DOI: 10.1109/CSICS.2017.8240440

A. Latorre-Rey, Ky Merrill, J. Albrecht, M. Saraniti

引用次数: 4

Scaleable vanadium dioxide switches with submillimeterwave bandwidth: VO2 switches with impoved RF bandwidth and power handling 具有亚毫米波带宽的可缩放二氧化钒开关:具有改进RF带宽和功率处理的VO2开关

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240450

C. Hillman, P. Stupar, Z. Griffith

引用次数: 14

Raytheon high power density GaN technology 雷神公司高功率密度氮化镓技术

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240475

R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy

引用次数: 6

Digital post-correction on dynamic nonlinearity in GaN HEMT track-and-hold sampling circuits GaN HEMT跟踪保持采样电路动态非线性的数字后校正

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240420

SungWon Chung, P. Srivastava, Xi Yang, T. Palacios, Hae-Seung Lee

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引用次数: 0

UHF power conversion with GaN HEMT class-E2 topologies 超高频功率转换与GaN HEMT类e2拓扑

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240439

J. A. García, M. Ruiz, D. Vegas, M. Pampín, A. Mediavilla

引用次数: 5

Artificial neural networks for compound semiconductor device modeling and characterization 用于化合物半导体器件建模和表征的人工神经网络

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240446

Jianjun Xu, D. Root

引用次数: 10

3D/Inkjet-printed millimeter wave components and interconnects for communication and sensing 用于通信和传感的3D/喷墨打印毫米波组件和互连

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240447

A. Georgiadis, J. Kimionis, M. Tentzeris

引用次数: 4

Wideband high power SPDT and SP3T GaN MMIC switches in low-cost overmolded plastic package 采用低成本复模塑料封装的宽带大功率SPDT和SP3T GaN MMIC开关

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240452

Tuong Nguyen, V. Zomorrodian, Thi Ri Mya Kywe

引用次数: 3

A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with PSAT>6.5 dBm up to 105 °C 完全集成的94 ghz 16元双输出相控阵发射机，采用SiGe BiCMOS, PSAT>6.5 dBm，最高可达105°C

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240454

Wooram Lee, Caglar Ozdag, Yigit Aydogan, J. Plouchart, M. Yeck, A. Cabuk, A. Kepkep, Emre Apaydin, A. Valdes-Garcia

引用次数: 11

THz InP bipolar transistors-circuit integration and applications 太赫兹InP双极晶体管电路集成与应用

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240463

M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, A. Young, J. Hacker, B. Brar, S.K. Kim, R. Maurer, M. Rodwell

引用次数: 13