雷神公司高功率密度氮化镓技术

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240475

R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy

{"title":"雷神公司高功率密度氮化镓技术","authors":"R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy","doi":"10.1109/CSICS.2017.8240475","DOIUrl":null,"url":null,"abstract":"In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Raytheon high power density GaN technology\",\"authors\":\"R. Leoni, N. Kolias, Patrick Jablonski, F. Altunkilic, Elliott C. Johnson, William Bourcy\",\"doi\":\"10.1109/CSICS.2017.8240475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在本文中，我们介绍了雷声公司的高功率密度GaN技术，该技术在工作电压为200V时实现了创纪录的50W/mm功率密度。该技术已针对90V下的MMIC性能和可靠性进行了优化。我们还提出了一种紧凑，高功率的带状MMIC，具有良好的可靠性。这种更高功率密度的技术有望对下一代通信和雷达系统产生深远的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Raytheon high power density GaN technology

In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.

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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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