2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献_第6页

Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems 高数据速率通信系统中fmax为650 GHz的InP hbt谐波失真分析

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240429

P. Sakalas, M. Schroter, T. Nardmann, H. Zirath

引用次数: 2

Innovative submicron thermal characterization method for AlGaN/GaN power HEMTs with hyperspectral thermoreflectance imaging 基于高光谱热反射成像的AlGaN/GaN功率hemt亚微米热表征方法

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240438

G. Brocero, D. Kendig, A. Shakouri, Y. Guhel, P. Eudeline, J. Sipma, B. Boudart

{"title":"Innovative submicron thermal characterization method for AlGaN/GaN power HEMTs with hyperspectral thermoreflectance imaging","authors":"G. Brocero, D. Kendig, A. Shakouri, Y. Guhel, P. Eudeline, J. Sipma, B. Boudart","doi":"10.1109/CSICS.2017.8240438","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240438","url":null,"abstract":"Significant advances in AlGaN/GaN heterostructure based technologies in the last decade, with AlGaN/GaN high electron mobility transistors (HEMTs) has led to high power performance at Gigahertz frequencies for communication, space, radar, and defense applications. The conjunction of the remarkable properties of the AlGaN/GaN heterojunction and the high thermal conductivity of the silicon carbide substrate enables GaN on SiC-based high electron-mobility transistors (HEMTs) to be very efficient for RF and microwave applications. However, this very high power density leads to self-heating under operating conditions and has important consequences for both performance and reliability. Since these devices, over time, are going to be increasingly smaller and more powerful a method for measuring the self-heating is of great interest for thermal management, temperature control, and optimizing simulation software. This paper presents early results of a new high spatial resolution thermal characterization technique using a thermoreflectance imaging system on a commercial sample. This technique, hyperspectral thermoreflectance imaging, enables us to obtain a clean thermal image in CW mode with 45 nm spatial resolution. We will show the thermal imaging results for a AlGaN/GaN HEMT on a SiC substrate. Although the zone of interest has narrow geometry and some grainy surfaces, the results show a very good linearity of reflection response with changing temperature with a significantly smaller error.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128623555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

90mW, 4.4Vp-p, 11.35Gb/s MZM driver enabling low-power tunable transmitter for SFP+ module application 90mW, 4.4Vp-p, 11.35Gb/s MZM驱动，为SFP+模块应用提供低功耗可调发射机

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240458

Thé Linh Nguyen, Lionel Li, G. Salamanca, O. Mizuhara

引用次数: 1

An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS 在130 nm SiGe BiCMOS中，具有锁存数据偏置的交流耦合10gb /s lvds兼容接收器

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240434

Brandon Mathieu, J. Mccue, B. Dupaix, V. Patel, S. Dooley, James Wilson, H. M. Lavasani, W. Khalil

{"title":"An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS","authors":"Brandon Mathieu, J. Mccue, B. Dupaix, V. Patel, S. Dooley, James Wilson, H. M. Lavasani, W. Khalil","doi":"10.1109/CSICS.2017.8240434","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240434","url":null,"abstract":"A power- and area-efficient Low Voltage Differential Signaling (LVDS) AC coupled receiver for short links is presented. The receiver accommodates the wide LVDS common-mode range without requiring large, board-mounted AC coupling capacitors or a slow, rail-to-rail input stage. Instead, a small, on-chip coupling capacitance generates a pseudo return-to-zero (RZ) pulse that is latched into the receiver via output feedback to bias switches. This reduces the effects of baseline wander caused by DC imbalanced data streams without the need for encoding or scrambling, while outputting a full-scale CMOS digital signal. The receiver is implemented in a 130 nm SiGe BiCMOS (fT = 200 GHz) technology and is tested with a 100 mV p-p differential PRBS15, demonstrating a BER of < 10−12. The design includes low and high power modes characterized at 8 Gb/s consuming 3.7 mW and at 10 Gb/s consuming 5.1 mW, respectively. A peak efficiency of 0.46 mW/Gb/s is recorded in the low power mode. The design occupies 0.0115 mm2, including the on-chip coupling capacitance.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114182843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

GaN non-uniform distributed power amplifier MMICs — The highs and lows (Invited) GaN非均匀分布式功率放大器mmic -高与低(特邀)

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240433

C. Campbell

引用次数: 14

HEMT model with internal nodes access and custom CDS function for amplifier design 具有内部节点访问和定制CDS功能的HEMT模型用于放大器设计

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240459

F. Kharabi

引用次数: 1

Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates GaN-on-Si和GaN-on-SiC衬底共面波导性能比较

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240467

Lina Cao, C. Lo, H. Marchand, W. Johnson, P. Fay

{"title":"Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates","authors":"Lina Cao, C. Lo, H. Marchand, W. Johnson, P. Fay","doi":"10.1109/CSICS.2017.8240467","DOIUrl":"https://doi.org/10.1109/CSICS.2017.8240467","url":null,"abstract":"A comparison of coplanar waveguides (CPWs) for MMIC applications fabricated on AlGaN/GaN HEMT heterostructures grown on both high-resistivity Si (GaN-on-Si) and semi-insulating SiC (GaN-on-SiC) substrates is reported. In addition to the two substrate types, two fabrication process flows-one suitable for mesa-isolated MMICs and the other appropriate for MMIC flows incorporating implant isolation-were evaluated. The propagation and loss performance of the CPWs on the different substrate types was assessed from 100 MHz to 20 GHz. While the ohmic loss associated with the metal lines was comparable between the two substrate types, some differences in the dielectric loss were observed. For the GaN-on-Si substrates, the dielectric loss contributes ∼0.1 dB/mm to the line loss, while the GaN-on-SiC substrates show less than 0.01 dB/mm. To gauge the impact for circuits, X-band λ/8 open-circuited stubs (for matching) and quarter-wave short-circuited stubs (e.g. for bias) were designed and compared. The obtained reflection coefficients suggest that while GaN-on-Si CPWs have more loss, matching network performance can be expected to be within ∼0.3 dB of those for GaN-on-SiC. From this study, it appears that GaN-on-Si substrates have interconnect performance for MMICs that is nearly as good as those on GaN-on-SiC substrates, demonstrating excellent potential for high-performance GaN MMICs.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132257677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Packaged 7 GHz GaN MMIC doherty power amplifier 封装7 GHz GaN MMIC多尔蒂功率放大器

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI: 10.1109/CSICS.2017.8240425

D. Gustafsson, A. Leidenhed, K. Andersson

引用次数: 4