具有内部节点访问和定制CDS功能的HEMT模型用于放大器设计

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240459

F. Kharabi

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引用次数: 1

摘要

本文介绍了用于高效率和宽带应用的Verilog-A FET模型的新特性和多功能性，并举例说明了氮化镓技术。它描述了内部输出节点可用于精确波形设计的灵活性，以实现高效级放大，以及更现实的CDS配方，以满足RF和电力电子应用中具有多个场板的新HEMT技术的需求。举例说明了8端模型的实用性。

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HEMT model with internal nodes access and custom CDS function for amplifier design

This paper describes new features and versatility of a Verilog-A FET model for High-Efficiency and wideband applications, with examples in GaN technologies. It describes the flexibility of having the Internal output nodes available for design in exact wave-shaping for high-efficiency class amplifications and a more realistic CDS formulation that meets the needs of newer HEMT technologies with multiple field-plates both in RF and power electronics applications. Examples are given to demonstrate the utility of the 8-terminal model.

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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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