在130 nm SiGe BiCMOS中,具有锁存数据偏置的交流耦合10gb /s lvds兼容接收器

Brandon Mathieu, J. Mccue, B. Dupaix, V. Patel, S. Dooley, James Wilson, H. M. Lavasani, W. Khalil
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引用次数: 2

摘要

提出了一种低功耗、低面积的短链路低压差分信号(LVDS)交流耦合接收机。该接收器可适应宽LVDS共模范围,而不需要大型板载交流耦合电容器或慢轨输入级。相反,一个小的片上耦合电容产生一个伪归零(RZ)脉冲,该脉冲通过对偏置开关的输出反馈锁存到接收器中。这减少了由直流不平衡数据流引起的基线漂移的影响,而不需要编码或置乱,同时输出全尺寸CMOS数字信号。该接收器采用130 nm SiGe BiCMOS (fT = 200 GHz)技术,并使用100 mV p-p差分PRBS15进行了测试,显示误码率< 10−12。该设计包括低功率和高功率模式,分别为8gb /s和10gb /s,功耗分别为3.7 mW和5.1 mW。低功耗模式下的峰值效率为0.46 mW/Gb/s。该设计占地0.0115 mm2,包括片上耦合电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS
A power- and area-efficient Low Voltage Differential Signaling (LVDS) AC coupled receiver for short links is presented. The receiver accommodates the wide LVDS common-mode range without requiring large, board-mounted AC coupling capacitors or a slow, rail-to-rail input stage. Instead, a small, on-chip coupling capacitance generates a pseudo return-to-zero (RZ) pulse that is latched into the receiver via output feedback to bias switches. This reduces the effects of baseline wander caused by DC imbalanced data streams without the need for encoding or scrambling, while outputting a full-scale CMOS digital signal. The receiver is implemented in a 130 nm SiGe BiCMOS (fT = 200 GHz) technology and is tested with a 100 mV p-p differential PRBS15, demonstrating a BER of < 10−12. The design includes low and high power modes characterized at 8 Gb/s consuming 3.7 mW and at 10 Gb/s consuming 5.1 mW, respectively. A peak efficiency of 0.46 mW/Gb/s is recorded in the low power mode. The design occupies 0.0115 mm2, including the on-chip coupling capacitance.
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