Packaged 7 GHz GaN MMIC doherty power amplifier

D. Gustafsson, A. Leidenhed, K. Andersson
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引用次数: 4

Abstract

This paper reports on a packaged GaN MMIC Doherty Power Amplifier operating in the 7 GHz band. The power amplifier exhibits a small-signal gain of 18 dB from 7.0 GHz to 8.0 GHz and the saturated output power is more than 42 dBm across the same frequency band. Measured power added efficiency is better than 24% in 10 dB back-off from saturation. The linearity of the amplifier is excellent — achieving a NMSE of −38 dB without DpD and −52 dB with DPD. The power amplifier was implemented in a 0.25 um gate-length GaN-HEMT technology and packaged in a QFN 6 mm × 6 mm package using plastic overmold. The dimensions of the MMIC were 4.38 mm × 4.38 mm. These results represent current state-of-the-art in high efficiency power amplifiers for wireless backhaul applications.
封装7 GHz GaN MMIC多尔蒂功率放大器
本文报道了一种工作在7ghz频段的封装GaN MMIC Doherty功率放大器。该功率放大器在7.0 GHz至8.0 GHz范围内具有18 dB的小信号增益,在同一频段内的饱和输出功率大于42 dBm。实测功率增加效率在饱和后10 dB时优于24%。放大器的线性度非常好,无DpD时的NMSE为- 38 dB,有DpD时的NMSE为- 52 dB。该功率放大器采用0.25 um门长GaN-HEMT技术实现,并使用塑料复模封装在QFN 6mm × 6mm封装中。MMIC的尺寸为4.38 mm × 4.38 mm。这些结果代表了目前无线回程应用中最先进的高效功率放大器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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