Raytheon high power density GaN technology

Abstract

In this abstract we present Raytheon's high power density GaN Technology, which has achieved a record power density of 50W/mm when operating at 200V. The technology has been optimized for MMIC performance and reliability at 90V. We also present a compact, high power Sband MMIC with demonstrated reliability. This higher power density technology is expected to have far reaching impact for next generation communication and radar systems.