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2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Focussed ion beam milling of silica microspheres 聚焦离子束铣削二氧化硅微球
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699684
D. Kane, R. Chater, D. Mcphail
{"title":"Focussed ion beam milling of silica microspheres","authors":"D. Kane, R. Chater, D. Mcphail","doi":"10.1109/COMMAD.2010.5699684","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699684","url":null,"abstract":"Focussed ion beam milling, combined with secondary ion and secondary electron imaging, has been used to evaluate the internal homogeneity of silica glass microspheres. Internal inhomogeneities that will result in non-uniform optical properties are found. The method is demonstrated as suitable for evaluating internal optical quality of the silica microspheres qualitatively. Basic studies to determine whether differences in chemical composition can be differentiated from density differences and topological contouring are required before the technique can be evaluated for more quantitative application.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130102027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Controlled lateral growth of silica nanowire 控制二氧化硅纳米线的横向生长
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699779
Tae-Hyun Kim, A. Shalav, R. Elliman
{"title":"Controlled lateral growth of silica nanowire","authors":"Tae-Hyun Kim, A. Shalav, R. Elliman","doi":"10.1109/COMMAD.2010.5699779","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699779","url":null,"abstract":"This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114967127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation 离子注入制备掺杂B和P纳米硅晶体的光致发光研究
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699793
Peter Ryan, B. C. Johnson, J. McCallum
{"title":"Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation","authors":"Peter Ryan, B. C. Johnson, J. McCallum","doi":"10.1109/COMMAD.2010.5699793","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699793","url":null,"abstract":"The effect of boron and phosphorous doping and co-doping on the optical properties of silicon nanocrystals formed in fused-silica by ion implantation is being studied. Boron-phosphorus pairs in silicon nanocrystals are of interest for possible applications in optical quantum computing.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116806701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxidation of AlInAs for current blocking in a photonic crystal laser AlInAs在光子晶体激光器中的氧化阻挡电流
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699799
R. Zhang, J. V. D. van der Tol, H. Ambrosius, P. Thijs, B. Smalbrugge, T. de Vries, G. Roelkens, F. Bordas, M. Smit
{"title":"Oxidation of AlInAs for current blocking in a photonic crystal laser","authors":"R. Zhang, J. V. D. van der Tol, H. Ambrosius, P. Thijs, B. Smalbrugge, T. de Vries, G. Roelkens, F. Bordas, M. Smit","doi":"10.1109/COMMAD.2010.5699799","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699799","url":null,"abstract":"To make an electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200–300nm. We propose to use the oxide of AlInAs to realize a current blocking function. In this way, based on submicron selective area re-growth, we aim for electrically injected photonic crystal lasers with high output power, small threshold currents and low power consumption. Here results are presented on the oxidation of AlInAs. The results show that it is feasible to use the oxide of AlInAs for current blocking in an InP-based membrane photonic crystal laser.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128394722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Junction temperature measurement on the light-emitting diodes lamp for space applications 空间用发光二极管灯的结温测量
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699697
W. Lu, T. Zhang, S. He, B. Zhang, N. Li, S. Liu
{"title":"Junction temperature measurement on the light-emitting diodes lamp for space applications","authors":"W. Lu, T. Zhang, S. He, B. Zhang, N. Li, S. Liu","doi":"10.1109/COMMAD.2010.5699697","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699697","url":null,"abstract":"The LED device for illumination in space application has been well done in the past few years, including the in cabin application on bio-science satellite in 2007 and out cabin application on spacecraft in 2008 to shine on the first human step in space of Chinese astronaut. The thermal property of assembled LED lamp has been experimentally characterized by a recently developed spectroscopy method, where the LED emission peak shift is used to indicate the junction temperature of LED device in lamp. The measurement precision on the LED junction temperature is about 1K, which could be used to check the thermal quality of LED lamp used for space application.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121193911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanoscale energy generation characteristics of piezoelectric thin films 压电薄膜的纳米级能量产生特性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699710
M. Bhaskaran, S. Sriram, S. Ruffell, A. Mitchell
{"title":"Nanoscale energy generation characteristics of piezoelectric thin films","authors":"M. Bhaskaran, S. Sriram, S. Ruffell, A. Mitchell","doi":"10.1109/COMMAD.2010.5699710","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699710","url":null,"abstract":"The use of nanoindentation to characterize in situ the voltage and current generation of piezoelectric thin films is reported for the first time. Continuous thin films and lithographically patterned nanoislands with limited interaction area have been characterised. The influence of size on energy generation parameters is reported, with the demonstration that nanoislands can exhibit more effective current generation.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126386722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-photon and entangled-photon sources for quantum information 量子信息的单光子和纠缠光子源
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699754
D. Ritchie, R. Stevenson, R. Young, A. J. Hudson, C. Salter, D. Ellis, A. J. Bennett, P. Atkinson, K. Cooper, I. Farrer, C. Nicoll, A. Shields
{"title":"Single-photon and entangled-photon sources for quantum information","authors":"D. Ritchie, R. Stevenson, R. Young, A. J. Hudson, C. Salter, D. Ellis, A. J. Bennett, P. Atkinson, K. Cooper, I. Farrer, C. Nicoll, A. Shields","doi":"10.1109/COMMAD.2010.5699754","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699754","url":null,"abstract":"We have fabricated and demonstrated the operation of triggered sources of single-photons and entangled-photon pairs using self-assembled InAs quantum dots grown by MBE.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"70 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114027254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mid-infrared InAsSb quantum dots with high emission efficiency 高发射效率的中红外InAsSb量子点
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699782
W. Lei, H. Tan, C. Jagadish
{"title":"Mid-infrared InAsSb quantum dots with high emission efficiency","authors":"W. Lei, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699782","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699782","url":null,"abstract":"Mid-infrared emission with high efficiency was achieved for InAsSb quantum dots by using InGaAsSb sandwich layers and InP carrier blocking layers. As a result of reduced quantum confinement and lattice mismatch around InAsSb quantum dots caused by InGaAsSb layers, an emission of 2.1 µm was obtained for the sample with In0.53Ga0.47As0.25Sb0.75 layers. The emission signal was observed up to 330 K by using InP carrier blocking layers to suppress the thermal escape of carriers.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116955629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparative study of transistors based on wurtzite and zincblende InAs nanowires 纤锌矿和锌闪锌矿InAs纳米线晶体管的比较研究
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699740
M. Williams, A. Burke, H. Joyce, A. Micolich, H. Tan, C. Jagadish
{"title":"A comparative study of transistors based on wurtzite and zincblende InAs nanowires","authors":"M. Williams, A. Burke, H. Joyce, A. Micolich, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699740","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699740","url":null,"abstract":"We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123043898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The e ffect o f s ubwavelength guidance on mode propagation and dis pers ion in high index optical waveguides 亚波长导引对高折射率光波导中模式传播和色散的影响。
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699787
H. T. Munasinghe, T. Monro, A. V. Shahraam
{"title":"The e ffect o f s ubwavelength guidance on mode propagation and dis pers ion in high index optical waveguides","authors":"H. T. Munasinghe, T. Monro, A. V. Shahraam","doi":"10.1109/COMMAD.2010.5699787","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699787","url":null,"abstract":"We investigate the effect of strong guidance in optical fibres with subwavelength core sizes and high index contrasts. We show that the reason results obtained via scalar modelling differ from those obtained vectorially is due to the effect of the longitudinal field component and the field curvature.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127818123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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