纤锌矿和锌闪锌矿InAs纳米线晶体管的比较研究

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699740

M. Williams, A. Burke, H. Joyce, A. Micolich, H. Tan, C. Jagadish

{"title":"纤锌矿和锌闪锌矿InAs纳米线晶体管的比较研究","authors":"M. Williams, A. Burke, H. Joyce, A. Micolich, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2010.5699740","DOIUrl":null,"url":null,"abstract":"We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparative study of transistors based on wurtzite and zincblende InAs nanowires\",\"authors\":\"M. Williams, A. Burke, H. Joyce, A. Micolich, H. Tan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2010.5699740\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.\",\"PeriodicalId\":129653,\"journal\":{\"name\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Conference on Optoelectronic and Microelectronic Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2010.5699740\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2010.5699740","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一项对名义上相同的纳米线场效应晶体管(NW-FET)器件的电子特性的比较研究，这些器件使用50 nm直径的InAs纳米线生产，只在相位上有所不同:一方面是ZB，另一方面是WZ。我们发现在ZB nw - fet中有更高的电流密度，并且开/关比高达100。

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A comparative study of transistors based on wurtzite and zincblende InAs nanowires

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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