2010 Conference on Optoelectronic and Microelectronic Materials and Devices最新文献

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Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation 改性锗凝聚制绝缘子上锗的应变松弛
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699714
D. Choi, B. Luther-Davies, T. Kim, K. Belay, D. Llewellyn, R. Elliman
{"title":"Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation","authors":"D. Choi, B. Luther-Davies, T. Kim, K. Belay, D. Llewellyn, R. Elliman","doi":"10.1109/COMMAD.2010.5699714","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699714","url":null,"abstract":"Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ∼20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and strained silicon on the GeOI.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115777789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of a hybrid polywell and stacked gradient poly-homojunction CMOS photodiode 混合多井和堆叠梯度多同质结CMOS光电二极管的仿真
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699717
P. Jansz, S. Hinckley
{"title":"Simulation of a hybrid polywell and stacked gradient poly-homojunction CMOS photodiode","authors":"P. Jansz, S. Hinckley","doi":"10.1109/COMMAD.2010.5699717","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699717","url":null,"abstract":"In this paper, we have simulated the performance of a photodiode array that has multiple wells per pixel as well as a stacked-gradient poly-homojunction (StaG) geometry. The pixel response resolution was improved when the first StaG epilayer was within 2 µm of the space charge region (SCR).","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123785838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nuclear-spin resonance in compound semiconductor two-dimensional systems 复合半导体二维系统中的核自旋共振
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699685
Y. Hirayama
{"title":"Nuclear-spin resonance in compound semiconductor two-dimensional systems","authors":"Y. Hirayama","doi":"10.1109/COMMAD.2010.5699685","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699685","url":null,"abstract":"We have developed highly-sensitive nuclear-spin resonance suitable for compound semiconductor quantum systems. Recent progress is summarized in this presentation.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128457380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogen platelet evolution in mechanically strained silicon 机械应变硅中氢血小板的演化
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699728
D. Pyke, R. Elliman, J. McCallum
{"title":"Hydrogen platelet evolution in mechanically strained silicon","authors":"D. Pyke, R. Elliman, J. McCallum","doi":"10.1109/COMMAD.2010.5699728","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699728","url":null,"abstract":"The effect of intrinsic and applied stress on hydrogen diffusion and trapping are studied by elastic-recoil detection (ERD), Rutherford backscattering and channelling (RBS-C) and transmission electron microscopy (TEM).","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127347136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of dynamic and static operation of a novel optical read-out technology for micromachined cantilever sensors 一种新型微机械悬臂式传感器光学读出技术的动态和静态运行比较
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699745
G. Putrino, A. Keating, M. Martyniuk, J. Dell
{"title":"Comparison of dynamic and static operation of a novel optical read-out technology for micromachined cantilever sensors","authors":"G. Putrino, A. Keating, M. Martyniuk, J. Dell","doi":"10.1109/COMMAD.2010.5699745","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699745","url":null,"abstract":"A novel, optical approach to the interrogation of MEMS cantilever sensors is discussed. We investigate the effects of placing a diffraction grating in a Si waveguide below a cantilever arm, to create a resonant cavity which will create interference on an optical signal through the waveguide. We look at FDTD simulations of the optical power transmitted through this device as the cantilever's height changes in relation to the diffraction grating. We discuss the use of this interrogation technique on micro-cantilever-based sensors operating in both the dynamic and static mode.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131672835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of spatially separated coherent coupling near the LO phonon resonance within asymmetric double quantum wells 非对称双量子阱中LO声子共振附近空间分离相干耦合的观察
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699688
C. Hall, L. Dao, H. Tan, C. Jagadish, J.A. Davis
{"title":"Observation of spatially separated coherent coupling near the LO phonon resonance within asymmetric double quantum wells","authors":"C. Hall, L. Dao, H. Tan, C. Jagadish, J.A. Davis","doi":"10.1109/COMMAD.2010.5699688","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699688","url":null,"abstract":"We examine the dynamics of coherently coupled heavy hole excitons localized within spatially separated quantum wells with an energy difference equal to the LO phonon energy.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131810692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High frequency mode-locking of diode lasers 二极管激光器的高频锁模
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699765
A. C. Bryce, L. Hou, M. Haji, R. Dylewicz, P. Stolarz
{"title":"High frequency mode-locking of diode lasers","authors":"A. C. Bryce, L. Hou, M. Haji, R. Dylewicz, P. Stolarz","doi":"10.1109/COMMAD.2010.5699765","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699765","url":null,"abstract":"(Abstract: Arial 12 pt font, title bold, abstract text to follow on directly after the title). Please use Arial 12 pt font for the abstract and limit to less than 150 words. Right and left justify text and use hyphenation. Use a 6 pt space between abstract and next section.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132252784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical hysteresis in mesoporous silicon microcavities 介孔硅微腔中的光滞现象
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699791
A. Pham, H. Qiao, B. Guan, M. Gal, P. Reece
{"title":"Optical hysteresis in mesoporous silicon microcavities","authors":"A. Pham, H. Qiao, B. Guan, M. Gal, P. Reece","doi":"10.1109/COMMAD.2010.5699791","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699791","url":null,"abstract":"We report on the observation of transient optical bistability in mesoporous silicon microcavity resonators in transmission and reflection when illuminated by a 532nm nanosecond pulsed laser. The properties of the bistablility such as the hysteresis area, the onset and damaged threshold intensities are shown to be porosity dependent. Our model suggests that the bistability is due to the induced nonlinear refractive index changes and the transient lifetime increases with increasing porosity. The role of surface states in the bistability process was also investigated by passivating the internal porous surface using the hydrosilylation chemistry.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129531019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Giant nonlinear optical activity in chiral metamaterials 手性超材料的巨非线性光学活性
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699794
I. Shadrivov, V. Fedotov, D. Powell, N. Zheludev, Y. Kivshar
{"title":"Giant nonlinear optical activity in chiral metamaterials","authors":"I. Shadrivov, V. Fedotov, D. Powell, N. Zheludev, Y. Kivshar","doi":"10.1109/COMMAD.2010.5699794","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699794","url":null,"abstract":"We create the first nonlinear chiral metamaterial operating at microwave frequencies that demonstrates giant nonlinear gyrotropy. We show that scattering of electromagnetic waves on such chiral metamaterials can be made highly asymmetric, with the transmission coefficient in two directions different by the factor larger than 65. We demonstrate that this electromagnetic diode possesses extremely large linear and nonlinear optical activity, along with its bistable response.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114986255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of dispersion and nonlinear loss characteristics of silica clad silicon nanowire 二氧化硅包层硅纳米线的色散和非线性损耗特性分析
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI: 10.1109/COMMAD.2010.5699768
Dihan Md. Nuruddin Hasan, M. Shah Alam, K. M. Mohsin, M. N. Hossain
{"title":"Analysis of dispersion and nonlinear loss characteristics of silica clad silicon nanowire","authors":"Dihan Md. Nuruddin Hasan, M. Shah Alam, K. M. Mohsin, M. N. Hossain","doi":"10.1109/COMMAD.2010.5699768","DOIUrl":"https://doi.org/10.1109/COMMAD.2010.5699768","url":null,"abstract":"An analytic equation has been proposed to realize propagation characteristics for different geometrical patterns of silicon nanowire using full vector FEM. Analysis of mode dependent nonlinear loss has revealed that attenuation of signal power is less for higher order modes than for the fundamental modes excited in the nanowire.","PeriodicalId":129653,"journal":{"name":"2010 Conference on Optoelectronic and Microelectronic Materials and Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123851371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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