Hydrogen platelet evolution in mechanically strained silicon

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699728

D. Pyke, R. Elliman, J. McCallum

引用次数: 0

Abstract

The effect of intrinsic and applied stress on hydrogen diffusion and trapping are studied by elastic-recoil detection (ERD), Rutherford backscattering and channelling (RBS-C) and transmission electron microscopy (TEM).

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机械应变硅中氢血小板的演化

利用弹性反冲探测(ERD)、卢瑟福后向散射和通道(RBS-C)和透射电镜(TEM)研究了本征应力和外加应力对氢扩散和俘获的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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