混合多井和堆叠梯度多同质结CMOS光电二极管的仿真

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699717

P. Jansz, S. Hinckley

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引用次数: 2

摘要

在本文中，我们模拟了具有每个像素多个阱以及堆叠梯度多同质结(StaG)几何结构的光电二极管阵列的性能。当第一层StaG涂层位于距空间电荷区(SCR) 2µm范围内时，像素响应分辨率得到提高。

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Simulation of a hybrid polywell and stacked gradient poly-homojunction CMOS photodiode

In this paper, we have simulated the performance of a photodiode array that has multiple wells per pixel as well as a stacked-gradient poly-homojunction (StaG) geometry. The pixel response resolution was improved when the first StaG epilayer was within 2 µm of the space charge region (SCR).

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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